GGNMOS ESD器件的建模与仿真  

GGNMOS ESD Device Modeling and Simulation

作　　者：赵莉 ZHAO Li(Nanjing Deruizhixin Electronic Technology Co.,Ltd.,Nanjing 210000,China)

机构地区：[1]南京德睿智芯电子科技有限公司,江苏南京210000

出　　处：《通信电源技术》2020年第8期113-115,共3页Telecom Power Technology

摘　　要：完成了GGNMOS ESD器件的建模,提出了ESD瞬时大脉冲条件下二次击穿前保护器件GGNMOS的理论模型,并利用Spectre工具完成了模型的仿真验证。通过仿真得到二次击穿前保护器件GGNMOS I-V特性曲线,确定设计的GGNMOS器件的触发电压Vt、维持电压Vp等电参数能否满足ESD器件设计窗口的需要。This article completed modeling of GGNMOS ESD device,The theoretical model of the protection device GGNMOS before the second breakdown under the condition of ESD transient large pulse is proposed and Using Spectre tool completed the simulation verification of the model.Through simulation and verification,it is determined whether the isoelectric parameters of the trigger voltage Vt and the sustain voltage Vp of the GGNMOS device designed in this paper can meet the needs of the ESD device design window.

关 键 词：ESD器件 GGNMOS 模型仿真 参数确定 

分 类 号：TN386[电子电信—物理电子学]