低温下GaSb基量子阱激光器的光电特性研究  

Photoelectric Characteristics of GaSb-based Quantum Well Lasers at Low Temperature

作　　者：李金友 王海龙[1] 杨锦 曹春芳[2] 赵旭熠 龚谦[2] LI Jin-you;WANG Hai-long;YANG Jin;CAO Chun-fang;ZHAO Xu-yi;GONG Qian(School of Physics and Physical Engineering,Qufu Normal University,Qufu Shandong 273165,China;State Key Laboratory of Information Functional Materials,Shanghai Institute of Microsystems and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)

机构地区：[1]曲阜师范大学物理工程学院,山东曲阜273165 [2]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《通信技术》2020年第6期1336-1340,共5页Communications Technology

基　　金：国家自然科学基金(No.61674096);山东省自然科学基金(No.ZR2019PA010)。

摘　　要：研究了GaSb基量子阱激光器在低温下的光电特性和功耗。实验结果表明8μm条宽激光器阈值电流Ith=12 mA,此时电压为3.46 V,功耗为41.52 mW;10μm条宽激光器阈值电流Ith=6 mA,此时电压为2.60 V,功耗为15.60 mW。在15 K下的光谱随着注入电流的增加发生红移,在8~10 mA内的光谱漂移为0.39 nm/mA,在10~20 mA内为0.02 nm/mA。在15~65 K范围内光谱随着注入温度的增加发生红移,光谱红移速度为0.316 nm/K。研究结果对GaSb基量子阱激光器的进一步应用具有重要意义。The photoelectric characteristics and power consumption of GaSb-based quantum well lasers at low temperature are explored.The experimental results indicate that the threshold current of the 8μm strip laser is Ith=12 mA,the voltage is 3.46 V,and the power consumption is 41.52 mW;the threshold current of the 10μm strip laser is Ith=6 mA,the voltage is 2.60 V,and the power consumption is 15.60 mW.The spectrum at 15 K is red-shifted as the injection current increases.The spectral drift in 8~10 mA is 0.39 nm/mA,and in 10~20 mA is 0.02 nm/mA.In the range of 15~65 K,the spectrum redshifts with increasing injection temperature,and the spectral redshift speed is 0.316 nm/K.The research results are of great significance for the further application of GaSb-based quantum well lasers.

关 键 词：分子束外延 量子阱 GaSb基 电学特性 功耗 光谱 

分 类 号：TN929.11[电子电信—通信与信息系统]