一种低功耗高稳态电平位移电路  

A Low Power and High Stability Level Shifter

作　　者：王佳妮 周泽坤[1] 李颂 石跃[2] 王卓[1] 张波[1] WANG Jiani;ZHOU Zekun;LI Song;SHI Yue;WANG Zhuo;ZHANG Bo(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ,of Elec.Sci.&lechnol.of China,Chengdu 610054,P.R.China;College of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]成都信息工程大学通信工程学院,成都610225

出　　处：《微电子学》2020年第3期315-320,共6页Microelectronics

基　　金：国家自然科学基金资助项目(61674025,61306035);中央高校基础研究基金资助项目(ZYGX2016J056);"气象信息与信号处理"省高校重点实验室基金资助项目(QXXCSYS201504,QXXCSYS201603)。

摘　　要：提出了一种新型低功耗、高稳态电平位移电路。该电路能将5 V输入电压转换为10 V输出电压,在电路的初态和电平转换过程中均保持高稳态。采用瞬态增强结构,能加速电平信号之间的转换,有效地减小了传输延迟,提高了电路稳定性。瞬态增强结构在稳定状态时不发挥作用,减小了静态功耗,获得了低功耗。基于标准0.35μm BCD工艺和多5 V LDMOS耐压器件,对该电平位移电路在5 MHz频率下进行验证。结果表明,动态功耗仅为24.8μA,上升沿响应速度仅为12.7 ns,下降沿响应速度仅为22.8 ns。该电路具有可靠性高、功耗低的优点。A novel low power and high stability level shifter was proposed.The circuit could convert an input voltage of 5 V to an output voltage of 10 V,while maintaining high stability during both the initial state and the voltage conversion process.A transient enhancement structure was used to accelerate the conversion between level signals,effectively reduce the transmission delay and improve the stability of the circuit.The transient enhancement structure did not work in the stable state,which decreased the static power consumption and achieved low power consumption.Based on the standard 0.35μm BCD process and multi-5 V LDMOS high voltage devices,the proposed level shift circuit was verified at 5 MHz frequency.The results showed that the dynamic power consumption was only 24.8μA,the response speed at the rising edge was only 12.7 ns,and the response speed at the falling edge was only 22.8 ns.This circuit had the advantages of high reliability and low power consumption.

关 键 词：电平位移 瞬态增强 高稳态 低功耗 

分 类 号：TN433[电子电信—微电子学与固体电子学]