NC-FinFET器件的仿真研究  

Simulation Research on NC-FinFET Device

作　　者：杨荣强 钱雅倩 粟雅娟 王颖倩[3] 陈睿 陈颖 盖天洋 郭成[1,2] 屈通 韦亚一 YANG Rongqiang;QIAN Yaqian;SU Yajuan;WANG Yingqian;CHEN Rui;CHEN Ying;GE Tianyang;GUO Cheng;QU Tong;WEI Yayi(Univ,of Chinese Academy of Sciences,Beijing 100049,P.R.China;Institute of Microelec.,Chinese Academy of Sciences,Beijing 100029,P.R.China;Semiconductor Manufacturing International Corporation,Shanghai 201203.P.R.China)

机构地区：[1]中国科学院大学,北京100049 [2]中国科学院微电子研究所,北京100029 [3]中芯国际集成电路制造有限公司,上海201203

出　　处：《微电子学》2020年第3期410-415,共6页Microelectronics

摘　　要：通过结合BSIMCMG模型与负电容(NC)模型,构建了NC-FinFET模型。基于所建立的NC-FinFET模型,推导分析了其等效电容模型。利用Hspice对NC-FinFET的器件特性进行了系统仿真与分析。结果表明,与FinFET相比,NC-FinFET在电学特性上有更加明显的优势,亚阈值摆幅更低。此外,分析了铁电材料的厚度对亚阈值摆幅及栅压放大倍数的影响,以及衬偏电压对NC-FinFET性能的影响,为在NC-FinFET中降低功耗和抑制寄生效应提供了理论依据和解决思路。The NC-FinFET model was constructed by combining the BSIMCMG model with the negative capacitance(NC)model.Based on the established NC-FinFET model,the equivalent capacitance model was analyzed.The device characteristics of NC-FinFET were simulated and analyzed by Hspice.The results showed that NC-FinFET had obvious advantages of characteristics compared with FinFET,and its subthreshold swing was lower.In addition,the influence of the thickness of ferroelectric material on subthreshold swing and gate voltage amplification was analyzed,and the influence of substrate-source voltage on the performance of NC-FinFET was analyzed,which provided a theoretical basis and solution for NC-FinFET to reduce power consumption and suppress parasitic effects.

关 键 词：NC-FinFET 负电容 亚阈值摆幅 BSIMCMG模型 衬偏效应 

分 类 号：TN432[电子电信—微电子学与固体电子学]