铜铟镓铝硒(Cu(InGaAl)Se2)薄膜制备及其光学性能  

Fabrication of Cu(InGaAl)Se2 Thin Films and Ellipsometry and Polarized Light Spectrum on the Film

作　　者：张宇龙 张维佳[2] 马强[2,3] 蒋昭毅[2] 鲁超群 倪聪 Zhang Yulong;Zhang Weijia;Ma Qiang;Jiang Zhaoyi;Lu Chaoqun;Ni Cong(Beihang University,Beijing 100191,China;Ningxia University,Yinchuan 750002,China;School of Physics and Nuclear Energy Engineering,Beihang University,Beijing 100191,China)

机构地区：[1]北京航空航天大学物理科学与核能工程学院,北京100191 [2]北京航空航天大学,北京100191 [3]宁夏大学,宁夏银川750002

出　　处：《稀有金属材料与工程》2020年第6期2104-2108,共5页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(51572008)。

摘　　要：采用溶剂热法制备掺铝的铜铟镓硒Cu(InGaAl)Se2(CIGAS)纳米粉末,并直接将此纳米粉末作为蒸镀材料制备铜铟镓铝硒(CIGAS)薄膜,再将其放置在装有高纯硒粉的自制密封法兰内在真空下进行硒化和退火处理,从而得到符合化学计量比的CIGAS薄膜。利用X射线衍射(XRD)和拉曼光谱(Raman)对样品结构和成分进行测量,确认CIGAS薄膜样品是黄铜矿结构和铜铟镓铝硒成分。使用椭圆偏振光谱测量技术对CIGAS薄膜进行椭偏光谱测量,进而得出薄膜光学参数如折射率n(λ)、消光系数k(λ)、吸收系数a(l)以及薄膜光能隙Eg,并发现Al元素的掺杂明显增加了薄膜光能隙,并进行了相关物理分析。The copper indium gallium aluminum selenium Cu(InGaAl)Se2(CIGAS)nanometer powders were prepared by the solvent thermal method,and the copper indium gallium aluminum selenium(CIGAS)film was prepared by directly using the nanometer powders as the evaporation materials.And then the amorphous film was placed in a sealing flange with high purity selenium powder to selenide and anneal under vacuum,and CIGAS film conformed to the stoichiometric ratio was obtained.The structure and composition of CIGAS thin films were determined by X-ray diffraction(XRD)and Raman spectroscopy.The elliptic parametersΨ(λ)andΔ(λ)of the CIGAS film were measured using elliptic polarization spectral measurement technique,and then the thin film optical parameters such as refractive index n(λ),extinction coefficient k(λ),absorption coefficientα(λ)and the light energy gap Eg were obtained.It is found that the doping of Al significantly increases the light energy gap Eg,and the related physical questions were also analyzed.

关 键 词：铜铟镓铝硒薄膜 溶剂热法 掺杂元素 硒化工艺 椭偏光谱测量 

分 类 号：TG88[金属学及工艺—公差测量技术] TB34[一般工业技术—材料科学与工程]