EHF频段40 W氮化镓发射机设计  

Design of EHF-band 40 W GaN Transmitter

作　　者：刘立浩[1] 余承伟[1] 薛腾[1] LIU Lihao;YU Chengwei;XUE Teng(The 54th Research Institute of CETC,Shijiazhuang 050081,China)

机构地区：[1]中国电子科技集团公司第五十四研究所,河北石家庄050081

出　　处：《无线电工程》2020年第8期701-705,共5页Radio Engineering

基　　金：装备预研领域基金资助项目(61402090101)。

摘　　要：针对砷化镓发射机体积大的问题,基于氮化镓功率放大器芯片,研制了一款EHF频段小型化40 W发射机。在改进型波导E-T结和波导-微带探针过渡结构基础上,提出了一种新型四路功率分配/合成结构。该结构具有体积小、插入损耗低和输入输出驻波好的优点。经测试,发射机在43.5~45.5 GHz频率范围内输出功率大于40 W。发射机机箱采用全密封结构,可直接安装于室外天线上,合理的机箱结构及热设计可确保发射机长期可靠地工作。Considering the problem of large volume of GaAs transmitter,an EHF-band miniaturized 40 W transmitter is developed based on the GaN power amplifier chip.Based on improved waveguide E-plane T-junction and waveguide to microstrip probe transition structure,a novel four-way power-dividing/combining structure is presented.This structure has such advantages as small size,low insertion loss,good input and output VSWR.According to the test results,the output power of this transmitter is more than 40 W in 43.5~45.5 GHz.The transmitter cabinet adopts a fully sealed structure and can be mounted directly on the outdoor antenna.Reasonable cabinet structure and thermal design ensure the long-term reliable operation of the transmitter.

关 键 词：EHF频段 氮化镓 发射机 E-T结 功率合成 

分 类 号：TN83[电子电信—信息与通信工程]