La掺杂Bi4Ti3O12薄膜的制备与光电性能研究  

Preparation and photoelectric properties of La-doped Bi4Ti3O12 thin films

作　　者：张青 赵强 何泓材 ZHANG Qing;ZHAO Qiang;HE Hongcai(School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 610054,China;Qingtao(Kunshan)Energy Development Co.,Ltd.,Kunshan 215300,Jiangsu Province,China)

机构地区：[1]电子科技大学材料与能源学院,四川成都610054 [2]清陶(昆山)能源发展有限公司,江苏昆山215300

出　　处：《电子元件与材料》2020年第7期35-40,共6页Electronic Components And Materials

基　　金：国家自然科学基金(51572123);姑苏创新创业人才计划(ZXL2016095,ZXT2018001);昆山双创人才计划(KSRC201704)。

摘　　要：Bi4Ti3O12材料因其出色的化学稳定性和优异的综合性能受到研究者们的广泛关注,在铁电、压电、光电、光催化等众多领域具有应用潜力。本文采用溶胶凝胶法制备了不同La元素掺杂量的Bi4Ti3O12薄膜,研究其光电性能。发现La掺杂后的Bi4Ti3O12薄膜的光电响应特性得到明显提升,Bi3.25La0.75Ti3O12薄膜具有最强的光电响应,光电流密度约为0.72μA/cm2。在此基础上,通过对Bi3.25La0.75Ti3O12薄膜施加偏压,实现了对其光电响应的调控,并结合能带理论和肖特基效应对这种现象进行了理论解释。这些结果展现了La元素掺杂的Bi4Ti3O12薄膜具有良好的光电响应性能,有望在光电检测和光驱动器件领域取得广泛应用。Bi4Ti3O12 has attracted wide attention due to its excellent chemical stability and excellent comprehensive properties. It is used in many fields such as ferroelectric, piezoelectric, optoelectronics and photocatalysis. Bi4Ti3O12 thin films with different La doping contents were prepared by sol-gel method, and their photoelectric properties were studied. It is found that the La doped Bi4Ti3O12 films exhibits better optical performance and photoelectric response, in which the Bi3.25La0.75Ti3O12 film has the best photoelectric response, the photocurrent density of it is about 0.72 μA/cm2. By applying the bias voltage to the Bi3.25La0.75Ti3O12 film, the photoelectric response of the film can be adjusted. The band theory and the Schottky effect are used to explain the phenomena. These results indicate that the La doped Bi4Ti3O12 thin films have good photoelectric performance, which makes it possible for future applications in the fields of photodetection and optical devices.

关 键 词：钛酸铋 薄膜 溶胶凝胶法 光电响应 掺杂 

分 类 号：TN304[电子电信—物理电子学]