C波段75W GaN HEMT高效率功率放大器MMIC  

C-band 75W GaN HEMT High Efficiency Power Amplifier MMIC

作　　者：杨常林 余旭明[1,2] 陶洪琪 徐波 YANG Changlin;YU Xuming;TAO Hongqi;XU Bo(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2020年第3期164-168,190,共6页Research & Progress of SSE

摘　　要：报道了一款基于0.25μm GaN HEMT工艺的C波段75 W高效率功率放大器MMIC。为提高功率增益,芯片的整体拓扑结构设计为三级。在末级输出匹配电路上设计了一个高效电抗式匹配拓扑,在末级管芯输入匹配电路上运用了谐波控制技术,同时利用GaN HEMT器件大信号模型来优化驱动比,通过这三种技术途径有效提高了芯片的附加效率。为扩展工作带宽及提高稳定性,其他匹配电路采用有耗匹配方式。在漏压28 V、脉宽100μs、占空比10%的工作条件下,芯片在4.8~6.0 GHz频带范围内,典型输出功率达到75 W(最高81 W),增益大于25.5dB,附加效率大于51%(最高55%),芯片面积为3.8 mm×5.5 mm。A high efficiency C-band 75 W power amplifier MMIC was presented utilizing 0.25μm GaN HEMT technology.In order to improve the power gain,the whole topological structure of the MMIC was designed as three stages.A high efficiency reactance matching topology was used in the final stage output matching circuit.Harmonic control technology was used in the input matching circuit of the final device.At the same time,a large-signal model of GaN HEMT was developed to optimize driving ratio.By three aspects of efforts,the power added efficiency of the MMIC could be effectively improved.Other matching circuit parts were lossy,which broadened the frequency band and improved the stability of the MMIC.At drain voltage of 28 V and pulse width of 100μs with a duty cycle of10%,the typical output power of the chip is 75 W(maximum 81 W),the gain is more than 25.5 dB and the power added efficiency(PAE)is more than 51%(maximum 55%)in the 4.8~6.0 GHz band.The chip size is 3.8 mm×5.5 mm.

关 键 词：GaN功率放大器 单片微波集成电路 C波段 大功率 高效率 

分 类 号：TN722.7.5[电子电信—电路与系统] TN492