空穴、H+在SiO2体内输运的数值模拟研究  

NUMERICAL SIMULATION OF HOLE AND H+TRANSPORTATION AT Si/SiO2 INTERFACE

作　　者：李培[1] 贺朝会[1] 郭红霞[2] 李永宏[1] 张晋新 Li Pei;He Chaohui;Guo Hongxia;Li Yonghong;Zhang Jinxin(Xi’an Jiaotong University,Xi’an 710049,China;Northwest Institution of Nuclear Technology,Xi’an 710024,China;Xidian University,Xi'an 710126,China)

机构地区：[1]西安交通大学,西安710049 [2]西北核技术研究所,西安710024 [3]西安电子科技大学,西安710071

出　　处：《数值计算与计算机应用》2020年第2期151-158,共8页Journal on Numerical Methods and Computer Applications

摘　　要：半导体器件的电离辐射效应涉及到材料内部的一系列物理过程,包括空穴对的产生与复合、载流子的输运以及氧化物陷阱电荷和界面态电荷的形成与累积.空穴和H+的输运机制是理解电离辐射效应的关键环节,其中空穴的输运影响着氧化物陷阱正电荷的形成、退火以及H+的释放,从而影响界面态电荷的形成.本文建立Si/SiO2界面的物理模型,借助TCAD数值模拟方法,分析不同剂量率辐照条件下空穴和H+在SiO2体内的输运机制和浓度分布.The ionizing-radiation effect of semiconductor devices involves a series of physical processes inside the material:including the generation and recombination of holes,carrier transport,the formation and accumulation of oxide trap charges and interface charges.The key to understand ionizing-radiation effect is the transport mechanism of H+and holes,which the hole transport affects the formation of oxide trap charge,annealing,and the release of H+,thus affecting the formation of interface states charge.In this paper,a physical model of the Si/SiO2 interface was established;TCAD numerical simulation is used to analyze the transport mechanism and concentration distribution of holes and H+inside the oxide layer irradiated by different dose rate.

关 键 词：电离辐射效应 空穴输运机制 H^+输运机制 TCAD数值模拟 

分 类 号：TN303[电子电信—物理电子学]