硅基三极管脉冲中子辐射效应TCAD仿真  

TCAD SIMULATION OF RADIATION EFFECTS OF PULSED NEUTRONS IN SILICON BIPOLAR JUNCTION TRANSISTOR

作　　者：段丙皇 熊涔 陈泉佑 赵洪超[1] Duan Binghuang;Xiong Cen;Chen Quanyou;Zhao Honchao(Jnstitute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China)

机构地区：[1]中国工程物理研究院电子工程研究所,绵阳621900

出　　处：《数值计算与计算机应用》2020年第2期159-168,共10页Journal on Numerical Methods and Computer Applications

基　　金：中物院培育基金(PY20200054);装备预研基金(24010301)资助。

摘　　要：本文针对文献报道的2N2222晶体管中子辐射实验结果,开展了硅基三极管的脉冲中子辐射效应仿真研究.首先,介绍了基于连续性假设的硅基器件脉冲中子辐射效应TCAD仿真方法:通过求解中子诱发缺陷与载流子的连续性方程,可计算脉冲中子辐射过程中缺陷的动力学演化过程,以及器件电学性能的瞬态响应;给出了仿真方法使用的物理模型、缺陷种类、缺陷之间的反应类型和反应参数等,以及在TCAD软件中的实现过程.然后,以文献中2N2222晶体管为对象,进行了中子辐射损伤模型与仿真方法的验证,结果表明辐射退火完成后2N2222基极电流和集电极电流计算结果与文献报道的实验结果一致,证明了该仿真方法的正确性.This paper is aimed to study the radiation effects of pulsed neutrons in silicon bipolar junction transistor(BJT)according to published experimental data on 2 N2222.Firstly,a TCAD method based on continuity hypothesis to simulate the radiation effects of pulsed neutrons in silicon BJT is introduced.Pulsed neutron radiation induced defect evolution and transient response can be calculated by solving continuity equations for defects and carriers.The utilized physical models,defect categories,defect reactions,parameters of reactions and realizing processes in TCAD are presented.Secondly,the radiation effects of pulsed neutron radiation in a traditional BJT 2N2222 are simulated.The calculated base current and collector current after neutron radiation agree well with experimental values in reference,which suggests the proposed TCAD simulation is reliable.

关 键 词：硅基三极管 2N2222 脉冲中子辐射 位移损伤 TCAD仿真 

分 类 号：TN303[电子电信—物理电子学] TP391.9[自动化与计算机技术—计算机应用技术]