Ⅲ-Ⅴ化合物的范德华外延生长与应用  

Van der Waals Epitaxy ofⅢ-ⅤCompounds and Their Applications

作　　者：陈琪 尹越 任芳 梁萌[1,2,3] 魏同波 伊晓燕[1,2,3] 刘志强 CHEN Qi;YIN Yue;REN Fang;LIANG Meng;WEI Tong-bo;YI Xiao-yan;LIU Zhi-qiang(Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;University of Chinese Academy of Sciences, Beijing 100049, China;Beijing Engineering Research Center for The 3rd Generation Semiconductor Materials and Application, Beijing 100083, China)

机构地区：[1]中国科学院半导体研究所照明研发中心,北京100083 [2]中国科学院大学,北京100049 [3]北京第三代半导体材料与应用工程技术研究中心,北京100083

出　　处：《发光学报》2020年第8期899-912,共14页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2017YFB0403300,2017YFB0403302);国家自然科学基金(61974140)资助项目。

摘　　要：Ⅲ-Ⅴ化合物半导体材料体系带隙涵盖范围广、载流子迁移率高,非常适宜用来制备发光二极管、激光器、高电子迁移率晶体管等光电子器件。在异质衬底上进行Ⅲ-Ⅴ化合物的共价外延时,只有外延层与衬底层间的晶格失配度较小时才能获得高质量外延层,而范德华外延已被证实可以有效放宽外延层与衬底层间晶格失配与热失配要求,有利于外延层的应力释放与质量提高,同时也易于外延层从衬底上剥离转移,为制备Ⅲ-Ⅴ化合物基新型光电子器件提供了便利。本文对二维(2D)材料、Ⅲ-Ⅴ化合物在石墨烯上的范德华外延过程以及使用范德华外延制备的Ⅲ-N基光电子器件的各项研究进行了讨论分析,并对其前景进行了展望。Ⅲ-Ⅴcompound semiconductors have wide band gap and high carrier mobility,making them suitable candidates for light-emitting diodes(LEDs),laser diodes(LDs),high electron mobility transistors(HEMTs)and other optoelectronics.For covalent epitaxy ofⅢ-Ⅴcompounds on hetero-substrates,high quality epilayer can only be obtained when the lattice mismatch between the substrate and epilayer is negligible.However,van der Waals epitaxy(vdWE)has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the epilayer and the substrate.By using vdWE,the stress in epilayer can be sufficiently relaxed,and the epilayer can be easily exfoliated and transferred,which is useful for theⅢ-Ⅴcompound-based novel devices fabricating.In this paper,we reviewed and discussed the important progresses on the researches of nitrides vdWE.The potential applications of nitrides vdWE are also prospected.

关 键 词：石墨烯 范德华外延 Ⅲ-Ⅴ化合物 

分 类 号：O484.1[理学—固体物理]