InGaAs/GaAs/InGaP量子阱激光器的温度电压特性  

Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser

作　　者：李金友 王海龙 杨锦 曹春芳 赵旭熠[2,3] 于文富 龚谦 LI Jin-you;WANG Hai-long;YANG Jin;CAO Chun-fang;ZHAO Xu-yi;YU Wen-fu;GONG Qian(Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China;State Key Laboratory of Functional Materials for Informatics, University of Chinese Academy of Sciences, Shanghai 200050, China;Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

机构地区：[1]曲阜师范大学物理工程学院,山东省激光偏光与信息技术重点实验室,山东曲阜273165 [2]中国科学院大学信息功能材料国家重点实验室,上海200050 [3]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《发光学报》2020年第8期971-976,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61674096);山东省自然科学基金(ZR2019PA010)资助项目。

摘　　要：研究了InGaAs/GaAs/InGaP量子阱激光器在不同温度下的电流-电压特性,并建立了一个理论模型进行描述。实验所用激光器腔长为0.3 mm,脊条宽度为3μm。实验测量得到该激光器在15~100 K的电压温度系数(d V/d T)为7.87~8.32 mV/K,在100~300 K的电压温度系数为2.93~3.17 mV/K。由理论模型计算得到该激光器在15~100 K的电压温度系数为2.56~2.75 mV/K,在100~300 K的电压温度系数为3.91~4.15 mV/K。在100~300 K,实验测量与理论模型计算得出的电压温度系数接近,理论模型能较好地模拟激光器的温度电压特性;但在15~100 K相差较大,还需要进一步完善。The current-voltage characteristics of an InGaAs/GaAs/InGaP quantum well laser at different temperatures have been investigated.A theoretical model has been developed to simulate the current-voltage characteristics of the laser.The length of the laser cavity utilized in the experiment is 0.3 mm,and the ridge width of the laser is 3μm.Experimental voltage-temperature coefficients(dV/dT)of the laser are from 7.87 to 8.32 mV/K within 15-100 K,and are from 2.93 to 3.17 mV/K within 100-300 K.Theoretical voltage-temperature coefficients of the laser in the range of 15-100 K are 2.56 to 2.75 mV/K,and in the range of 100-300 K are 3.91 to 4.15 mV/K.Within 100-300 K,the theoretical voltage-temperature coefficients are close to the experimental coefficients.However,within 15-100 K,there are large differences between the theoretical coefficients and experimental ones,which need to be improved.

关 键 词：量子阱激光器 InGaAs/GaAs/InGaP 低温 温度电压特性 

分 类 号：TN248.4[电子电信—物理电子学] TN365