一种高精度过温保护电路的设计  

Design of a High-precision over Temperature Protection Circuit

作　　者：胡扬 聂海[1] HU Yang;NIE Hai(Chengdu University of Information Technology,Chengdu 610225,China)

机构地区：[1]成都信息工程大学,四川成都610225

出　　处：《成都信息工程大学学报》2020年第3期275-278,共4页Journal of Chengdu University of Information Technology

基　　金：四川省科技计划资助项目(2014FZ0050)。

摘　　要：基于CSMC.25 μm BCD工艺模型和BG电路结构中的三极管VBE的负温度系数,与恒流源和数据选择器所产生的高低阈值电压的比较,得到一种高精度的过温保护电路.通过Cadence IC51 Spectre软件仿真平台仿真验证,在典型的模型(tt)仿真情况下,当温度大于166.4℃时,输出由低变高,控制信号迫使整个芯片关断;当温度低于132℃时,输出电平由高转为低,电路恢复正常工作状态.设置的电源电压范围在3.7 ~5 V时,过温的阈值变化仅为0.3V,由此可见温度的变化精度高.This paper is based on the CSMC.25um BCD process model.Based on the negative temperature coefficient of the triode Vbe in the BG circuit structure,compared with the high and low threshold voltages generated by the constant current source and the data selector,a high.precision over-temperature protection circuit is obtained.Through the simulation of Cadence IC51 Spectre software simulation platform,under the circumstance of the simulation by the typical model(tt),when the temperature is greater than 166.4℃,the output voltage changes from low to high,and the control signal forces the chip to turn off;when the temperature is lower than 132℃,The output voltage changes from high to low and the circuit returns to normal operation.When we set the power supply voltage ranged from3.7 to 5V,the overtemperature threshold change is only 0.3V,which shows that the temperature changes accurately.

关 键 词：高精度 过温保护 阈值电压 BCD工艺 

分 类 号：TN433[电子电信—微电子学与固体电子学]