含氟低介电常数有机材料研究进展  

Research Progress of Low Dielectric Constant Fluorinated Organic Materials

作　　者：王海 程文海 周涛涛 卢振成 王凌振 蒋梁疏 WANG Hai;CHENG Wenhai;ZHOU Taotao;LU Zhencheng;WANG Lingzhen;JIANG Liangshu(Zhejiang Kaisn Fluorochemical Co.,Ltd.,Quzhou 324004,China)

机构地区：[1]浙江凯圣氟化学有限公司,浙江衢州324004

出　　处：《有机氟工业》2020年第2期30-34,共5页Organo-Fluorine Industry

摘　　要：低k(介电常数)介质材料替代传统SiO2作为互连金属介电层是集成电路发展的必然趋势。总结了低k材料性能基本要求及制备方法,重点探讨含氟低k有机材料研究进展。认为获得k值低且综合性能优异的含氟有机材料是最终目的,并对含氟低k有机材料的研究前景进行了展望。It is an inevitable trend for the development of integrated circuits that low-k dielectric materials replace traditional SiO2 as cross-talking of interconnection structure. The basic performance requirements and preparation methods of low-k materials were summarized, and the research progress of low-k fluorinated organic materials was mainly discussed. It is believed that obtaining the fluorinated organic materials with low-k value and excellent overall performance is the ultimate goal, and then the hopeful development trend of low-k fluorinated organic materials are predicted.

关 键 词：金属介电层 低K材料 含氟低k有机材料 

分 类 号：TB34[一般工业技术—材料科学与工程] TN405[电子电信—微电子学与固体电子学]