基于氮化镓功率器件的过流保护电路研究  

Research on Over-current Protection Circuit Based on GaN Power Device

作　　者：张雅静 李建国 李艳[2] 郑琼林[2] 王久和[1] ZHANG Yajing;LI Jianguo;LI Yan;ZHENG Trillion Q;WANG Jiuhe(School of Automation,Beijing Information Science and Technology University,Beijing 100192,China;School of Electrical Engineering,Beijing Jiaotong University,Beijing 100044,China)

机构地区：[1]北京信息科技大学自动化学院,北京100192 [2]北京交通大学电气学院,北京100044

出　　处：《电源学报》2020年第4期53-57,共5页Journal of Power Supply

基　　金：北京市自然科学基金资助项目(3204040/3202010);国家自然科学基金资助项目(51777012/51477011);北京信息科技大学促进高校内涵发展科研水平提高资助项目(2020KY NH209)。

摘　　要：提出了一种适用于高频场合下氮化镓GaN(gallium nitride)功率器件的过流保护电路。该保护电路在高达几百千赫甚至兆赫的开关频率下,通过检测氮化镓功率器件的漏-源电压实现对过流故障的识别,在故障下可迅速关断GaN器件进行保护。仿真和实验结果证明,该过流保护电路具有响应迅速、结构简单和抗干扰性强的优点,可有效提高氮化镓器件应用的可靠性。A gallium nitride(GaN)based over-current protection circuit is proposed,which is suitable for high-frequency application scenarios.This circuit can identify the over-current fault by detecting the drain-source voltage of a GaN power device at a switching frequency of up to several hundred kHz or even 1 MHz,and it can quickly turn off the GaN device for protection under fault.Simulation and experimental results show that the proposed over-current protection circuit has advantages of fast response,simple structure and strong anti-interference,thereby effectively improving the reliability of the applications of GaN devices.

关 键 词：高频 氮化镓 增强型 过流保护电路 

分 类 号：TM464[电气工程—电器]