半导体GaN功率开关器件的结构改进  

Improvement in Structure of Semiconductor GaN Power Switching Device

作　　者：杨媛媛[1] YANG Yuanyuan(Electrical Engineering Depart,Guizhou Vocational Technology College of Electronics&Information,Kaili 556000,China)

机构地区：[1]贵州电子信息职业技术学院电力工程系,凯里556000

出　　处：《电源学报》2020年第4期186-192,共7页Journal of Power Supply

摘　　要：因氮化镓GaN(gallium nitride)材料自身的物理性质优势,该材料更适用于高温且大功率电子器件的制作。但目前GaN材料制作的功率开关器件存在反向饱和漏电现象,业界一直以进一步发挥GaN性能为目的展开研究,GaN材料的全面实用化应用也面临着性能稳定性的挑战。为此,提出一种新的半导体GaN功率开关器件结构改进方法。由于集电极-发射极击穿电压和饱和压降是衡量器件可靠性的重要指标,因此采用绝缘栅混合阳极二极管取代平面肖特基势垒二极管,解决集电极-发射集击穿电压和饱和压降输出不合理的问题。改进结构后的器件阳极由肖特基栅极和欧姆阳极金属短接组成,阴极为欧姆金属;改进器件的制作主要采用隔离、钝化、凹槽刻蚀和介质淀积等工艺,更好地实现了功率开关和功率转换功能。经仿真结果的分析可知:改进结构后的功率开关器件能有效减少反向饱和漏电状况,且改进器件的温度与电压、比导通电阻成正比,高温性能良好。Owing to their advantage in physical properties,gallium nitride(GaN)materials are more suitable for the manufacture of high-temperature and high-power electronic devices.However,the power switching devices made of GaN materials currently have reverse saturation leakage.The industry has been continuously conducting research to further improve the GaN performance.Moreover,the full-scale practical application of GaN materials also faces the challenge of performance stability.In this paper,a novel method for improving the structure of a semiconductor GaN power switching device is proposed.Considering that the collector-emitter breakdown voltage and saturation voltage drop are important indicators for measuring the device reliability,an insulated gate hybrid anode diode is used instead of a planar Schottky barrier diode,thus solving the problem of collector-emitter breakdown voltage as well as the unreasonable output of saturation voltage drop.The anode of the improved device is composed of a Schottky grid and a piece of Ohmic anode metal(which are short-circuited),and its cathode is a piece of Ohmic metal.The improved device is mainly manufactured by isolation,passivation,groove etching,dielectric deposition,etc,thereby realizing the function of power switching and power conversion.The analysis of simulation results shows that the improved power switching device can effectively reduce the reverse saturation leakage,and its temperature is directly proportional to voltage and the specific on-resistance,exhibiting a satisfying performance at high temperatures.

关 键 词：绝缘栅混合阳极二极管 GaN功率开关 欧姆金属 饱和压降 

分 类 号：TP319[自动化与计算机技术—计算机软件与理论]