Progress in semiconductor quantum dots-based continuous-wave laser  

半导体量子点连续泵浦激光研究进展

作　　者：Lei Wang Guang Dai Luogen Deng Haizheng Zhong 王雷;戴光;邓罗根;钟海政(MIIT Key Laboratory for Low-dimensional Quantum Structure and Devices,School of Materials Science&Engineering,Beijing Institute of Technology,Beijing 100081,China;School of Physics,Beijing Institute of Technology,Beijing 100081,China)

机构地区：[1]MIIT Key Laboratory for Low-dimensional Quantum Structure and Devices,School of Materials Science&Engineering,Beijing Institute of Technology,Beijing 100081,China [2]School of Physics,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Science China Materials》2020年第8期1382-1397,共16页中国科学（材料科学（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(61722502 and 61705009);BIT funds。

摘　　要：Continuous-wave(CW)operated laser is a key component for photonic chips.It has been highly desired to develop low-threshold,high-efficiency,long-term operational,low-cost and easily integratable CW laser.As excellent optical gain materials,quantum dots(QDs)have been intensively investigated for on-chip CW lasers owing to their high photoluminescence quantum yields,tunable emission wavelengths and easy integration.Base on the difference of preparation processes,QDs can be classified into epitaxial QDs and solution-processed colloidal QDs(CQDs).In this mini-review,we summarize the research progresses of epitaxial III–V semiconductor QD and solution-processed CQD-based CW lasers.The challenges associated with the realization of CQD CW lasers are discussed in detail.In particular,the emerging perovskite-based CW lasers are highlighted.Finally,a short perspective of QD-based CW lasers is presented.连续激光器是光子芯片的关键部件.低阈值、高效率、长寿命、低成本、易集成的连续激光器一直是科学界和工业界追求的目标之一.量子点具有荧光量子产率高、发光波长可调、易于集成等优点,是一种优异的激光增益材料.根据制备工艺的不同,量子点可分为外延生长的量子点和溶液制备的胶体量子点.本文综述了使用外延生长方法制备的Ⅲ-V半导体量子点和胶体量子点连续激光器的研究进展,详细讨论了胶体量子点实现连续激光所面临的困难和挑战,总结了钙钛矿连续波激光器研究的进展.最后,讨论了量子点连续激光器实现光子芯片集成应用所面临的挑战.

关 键 词：quantum dots continuous-wave laser PEROVSKITE PHOTONICS 

分 类 号：O471.1[理学—半导体物理] TN248[理学—物理]