融合相邻单元高低页存储可靠性的闪存译码算法  

An improved decoding algorithm for NAND flash memory fusing the storage reliability of upper and lower pages of adjacent cells

作　　者：郑敏华 韩国军[1] ZHENG Minhua;HAN Guojun(School of Information Engineering,Guangdong University of Technology,Guangzhou 510006,China)

机构地区：[1]广东工业大学信息工程学院,广东广州510006

出　　处：《应用科技》2020年第3期17-23,共7页Applied Science and Technology

基　　金：国家自然科学基金项目(61871136)。

摘　　要：结合高密度NAND闪存数据的写入与读取机制,以及高低页之间的关联关系和干扰噪声对阈值电压分布的影响特性,本文提出了一种融合相邻单元高低页存储可靠性的BP译码算法。该算法利用读取顺序和编程顺序之间的关系,通过相邻字线低页的译码信息来辅助改善高页的纠错性能。仿真实验表明,相较传统的BP译码算法,该算法在没有增加额外复杂度的情况下能有效降低高页的误码率。In this paper,by fully considering the reading and writing mechanism of high-density NAND flash memory,the relationship of upper pages and lower pages,and the influence of channel noises on the distribution of threshold voltage,an improved BP decoding algorithm is proposed by fusing the storage reliability of upper and lower pages of adjacent cells.Based on the relationship between read-write order and programming order,this algorithm improves the error correction performance of upper pages with the decoding information of adjacent word lines’lower pages.Simulation results show that the proposed algorithm effectively reduces the bit error ratio of upper pages without increasing extra complexity compared with the traditional BP decoding algorithm.

关 键 词：NAND闪存 读写机制 干扰噪声 阈值电压分布 相邻单元 BP译码算法 误码率 数据存储 

分 类 号：TN919.5[电子电信—通信与信息系统]