g-C3N4基复合纳米材料光催化性能研究进展  被引量:3

Review on photocatalystic performance of g-C3N4 based composite nanomaterials

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作  者:严超 牛浩洋 严飞越 匡代洪[1] 杨占金[1] 杨方源 Yan Chao;Niu Haoyang;Yan Feiyue;Kuang Daihong;Yang Zhanjin;Yang Fangyuan(School of Math and physics,Xinjiang Agricultural University,Wulumuqi 830052,Xinjiang,China)

机构地区:[1]新疆农业大学数理学院,新疆乌鲁木齐830052

出  处:《工业催化》2020年第8期1-7,共7页Industrial Catalysis

基  金:新疆维吾尔自治区自然科学基金(2018D01A14)。

摘  要:g-C3N4可见光利用率高,具有非常好的光催化性能,是一种新型的无金属半导体光催化材料,然而电导率低,易团聚,光生载流子容易复合限制了其在实际生产中的应用。为进一步提高g-C3N4基复合材料的光催化性能,研究者做了大量修饰工作,并取得显著成果。本文主要从半导体材料耦合(细分为原子层沉积法和三元纳米材料复合)、贵金属修饰和量子点敏化三个方面概括了近年来对g-C3N4的修饰改性工作,探究了g-C3N4基复合材料在光催化降解有机污染物、光解水制氢、催化“记忆”效应和降解重金属等不同领域方面取得的成效。指出g-C3N4基复合材料发展面临的问题,最后对g-C3N4基复合材料未来的发展提出了展望。As a novel metal-free semiconductor photocatalyst,g-C3N4 has good visible light response,excellent photocatalytic performance.However,it is still restricted in the further applications because of low conductivity,severe aggregation and the high recombination of photogenerated electron-hole pairs.In order to improve the photocatalytic performance of g-C3N4,many researchers have modified the materials and the result is remarkable.In this paper,we have summarized the latest research progress on g-C3N4 in three aspects including couple semiconductors(involving atomic layer deposition method,designing ternary composite materials),doping noble metals as well as quantum dots sensitization,investigated the application of g-C3N4 based composite materials in different fields,such as degrading organic pollutant,hydrogen production,catalytic memory,degrading heavy metals and so on.In the end,we indicate the problems and propose the future development of the g-C3N4 based composite materials.

关 键 词:复合材料 g-C3N4 材料修饰 光催化 

分 类 号:O47[理学—半导体物理] O644[理学—物理]

 

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