基于碳化硅的高功率密度矩阵变换器  

Silicon Carbide High Power Density Matrix Converter

作　　者：黄蕾 HUANG Lei(Shanghai Chint Power Systems Co.,Ltd.,Shanghai 201614,China)

机构地区：[1]上海正泰电源系统有限公司,上海201614

出　　处：《电器与能效管理技术》2020年第7期16-24,共9页Electrical & Energy Management Technology

摘　　要：总结了矩阵变换器的主要电路拓扑和双空间矢量调制方式。针对四步换流法和两步换流法存在的问题,提出在碳化硅结型场效应晶体管(SiC-JFET)矩阵变换器中采用四步换流法、三步换流法和直接换流法相结合的换流方法。新一代SiC-JFET管具有高电压应力、低通态阻抗、高开关频率等特点,适合应用于如高功率密度矩阵变换器等场合。设计了基于1200 V/6 A SiC-JFET的直接式矩阵变换器样机,样机开关频率为200 kHz,功率密度为3 kVA/L,讨论了矩阵变换器样机的结构设计。实验结果证明,SiC-JFET适合应用于高开关频率、高功率密度矩阵变换器。The mainly circuit topologies of the matrix converter were reviewed and also the double space vector modulation strategy for the matrix converter control was analyzed.Problems existed in traditional four-step and two-step commutation strategies were analyzed and a hybrid commutation strategy which combines four-step commutation,three-step commutation and directly commutation was used in the SiC-JFET matrix converter commutation.New SiC switches such as the JFET,which are provided simultaneously with high voltage blocking,low switching losses and low on-state resistance,offer new possibilities and allow for implementing a high switching frequency matrix converter.The matrix converter prototype was designed specifically for 1200 V,6 A SiC JFETs for a target switching frequency of 200 kHz with the power density of 3 kVA/L.The design and physical construction of the matrix converter are also discussed.The experimental results show that the SiC-JFET adapts a high switching frequency matrix converter.

关 键 词：矩阵变换器 换流 碳化硅 结型场效应晶体管 

分 类 号：TM464[电气工程—电器]