6英寸SiC衬底上MOVPE生长GaN HEMT材料  

GaN HEMT Materials on 6-inch SiC Substrate Grown by MOVPE

作　　者：尹甲运[1,2] 张志荣[2] 李佳[1,2] 房玉龙[1,2] 郭艳敏[1,2] 高楠 冯志红 Yin Jiayun;Zhang Zhirong;Li Jia;Fang Yulong;Guo Yanmin;Gao Nan;Feng Zhihong(Science and Technology on ASIC Labarotary,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]专用集成电路重点实验室,石家庄050051 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2020年第8期623-626,637,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61804139)。

摘　　要：采用金属有机气相外延(MOVPE)方法在6英寸(1英寸=2.54 cm)SiC衬底上生长了GaN HEMT材料。使用高分辨X射线衍射仪、原子力显微镜和微区拉曼光谱仪等对材料的表面形貌、晶体质量和应力进行了测试和表征。测试结果表明,GaN外延材料(002)面和(102)面的半高宽(FWHM)分别为204″和274″,表面粗糙度(扫描范围为5μm×5μm)为0.18 nm,GaN外延材料具有较好的晶体质量。拉曼光谱测试结果显示,6英寸GaN外延材料应力为压应力,并得到有效控制。非接触霍尔测试结果显示AlGaN/GaN HEMT结构材料二维电子气(2DEG)迁移率为2046 cm2/(V·s),面密度为6.78×1012 cm-2,方块电阻相对标准偏差为1.85%,结果表明,制备的6英寸GaN HEMT结构材料具有良好的电学性能。GaN HEMT materials on 6-inch(1 inch=2.54 cm)4 H-SiC substrate were grown by metal organic vapor phase epitaxy(MOVPE)method.The surface morphology,crystal quality and stress of the materials were measured and characterized by the high resolution X-ray diffractometer,atomic force microscope and Raman spectrometer.The test results show that the full width at half maximum(FWHM)values of GaN epitaxial materials(002)and(102)planes are 204″and 274″,respectively,and the surface roughness(5μm×5μm of scanning range)is 0.18 nm,which indicate that the GaN epitaxial material has good crystalline quality.The Raman spectrum test results show that the stress over the 6-inch GaN epitaxy material is compressive stress and is effectively controlled.The contactless Hall test results show that the AlGaN/GaN HEMT structural material has a two-dimensional electron gas(2 DEG)mobility of 2046 cm2/(V·s),a surface density of 6.78×1012 cm-2,and a relative standard deviation of square resistance of 1.85%,indicating that the 6-inch GaN HEMT structural material has good electrical performance.

关 键 词：GaN/AlGaN/GaN SiC GaN HEMT 应力 金属有机气相外延(MOVPE) 

分 类 号：TN304.23[电子电信—物理电子学]