基于磁控溅射法的二氧化钒薄膜制备技术优化及应用  

Optimization and Application of Vanadium Dioxide Thin Films by Using Magnetron Sputtering Method

作　　者：何长安 王庆国 曲兆明 邹俊 郭松茂 娄华康 王妍 HE Changan;WANG Qingguo;QU Zhaoming;ZOU Jun;GUO Songmao;LOU Huakang;WANG Yan(63601 Troops,Jiuquan 732750,China;Key Laboratory of Technology on Electromagnetic Environment Simulation&Protection,Army Engineering University,Shijiazhuang 050003,China)

机构地区：[1]63601部队,甘肃酒泉732750 [2]陆军工程大学强电磁场环境模拟与防护技术国防科技重点实验室,河北石家庄050003

出　　处：《材料科学与工程学报》2020年第4期629-632,589,共5页Journal of Materials Science and Engineering

基　　金：武器装备探索研究资助项目(713xxxxx)。

摘　　要：将磁控溅射法和真空退火工艺相结合,在Al2O3陶瓷基片上制备出VXOY薄膜,降低了实验对仪器精度的要求,提高了实验的成功率。对基片进行磁控溅射镀膜,在管式炉中进一步氧化处理生成表面均匀的V2O5,然后进行高温退火处理,对不同退火条件下生成的薄膜进行X射线衍射仪(XRD)表征和电子显微镜(SEM)观察。研究表明,通过对磁控溅射和真空退火工艺两个过程的控制参数优化设计,实现了高重复性VO2薄膜的制备;薄膜组份均匀性得到了显著改善;退火温度在475℃到525℃区间时可生成相变性能较好的VO2薄膜;退火温度为500℃、退火时间110 min时,薄膜表面晶体结构最好,晶粒大小均匀。实验结果对VO2薄膜高重复性制备及卫星表面应用具有指导意义。The VxOy thin films were prepared on the Al2O3 ceramic substrate by using magnetron sputtering and vacuum annealing processes,which reduced the strict requirements of the processing machine and enhanced the success rate of the V 2O 5 samples.The VxOy film were first prepared by magnetic-controlled sputtering process and then were further oxidized at high temperature in a tube furnace to produce uniform V 2O 5 film.Characterizations were performed by some conventional methods for the samples under different annealing conditions.The investigations show that,through the optimization of processing parameters,the preparation with high repeatability of VO2 thin film can be realized and the uniformity of ingredients of the thin film can be improved.When annealing temperature ranges from 475℃to 525℃,the VO2 films with better performance of phase transition were produced.When the annealing temperature was 500℃and the annealing time was 110 min,the smooth surface structure and uniform grain size were obtained.The experimental results are of guiding significance for the highly reproducible preparation of VO2 thin film and the application of satellite surface.

关 键 词：二氧化钒薄膜 退火处理 磁控溅射 晶体生长 卫星设计 

分 类 号：O649[理学—物理化学]