高增益CsPbBr3钙钛矿纳米棒的研制及其稳定性研究  被引量:4

Synthesis and Stability of CsPbBr3 Perovskite Nanorods with High Optical Gain

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作  者:时月晴 李如雪 余佳豪 王胜 杨绪勇 陈锐 Shi Yueqing;Li Ruxue;Yu Jiahao;Wang Sheng;Yang Xuyong;Chen Rui(Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,Guangdong 518055,China;Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China)

机构地区:[1]南方科技大学电子与电气工程系,广东深圳518055 [2]上海大学新型显示技术及应用集成教育部重点实验室,上海200072

出  处:《中国激光》2020年第7期281-288,共8页Chinese Journal of Lasers

基  金:国家自然科学基金(11404161,11574130);深圳市科技创新委员会基金(KQJSCX20170726145748464,JCYJ20180305180553701,KQTD2015071710313656)。

摘  要:通过在CsPbBr3纳米晶体中加入油胺铟(In(OAm)3)和支化三(二乙胺)膦(TDP)配体,在减缓晶体生长速度的同时促进取向生长,获得了CsPbBr3钙钛矿纳米棒材料。通过透射电子显微镜、X射线衍射系统、紫外-可见分光光度计、光致发光光谱仪对所制备的CsPbBr3钙钛矿纳米棒晶体特性进行表征,结果表明该纳米棒具有质量好、缺陷密度低、发光性能较好的优点;利用可变条纹长度和变功率PL光谱测得了样品的增益系数(860 cm^-1)和阈值功率(17.5μJ/cm^2);同时测量了样品在极端老化的双八五(温度85℃和相对湿度85%)条件下的发光稳定性,发现稳定性得到了提升。为实现高稳定性钙钛矿激光器提供了实验基础和材料支撑。In this study,an intermediate monomer and a branched tris(diethylamino)phosphine(TDP)were employed in a CsPbBr3 perovskite nanocube solution to synthesize CsPbBr3 perovskite nanorods,ensuring both the slow growth rate and the orientation growth.Transmission electron microscopy,X-ray diffraction,ultraviolet-visible absorption spectroscopy,and photoluminescence(PL)spectroscopy were used to characterize the obtained material.It is found that the CsPbBr3 perovskite nanorods exhibit good crystal quality,low defect density,and favorable optical property.The gain coefficient(860 cm^-1)and threshold(17.5μJ/cm^2)were measured through the variable length stripe method and PL spectra under different pumping densities.Furthermore,the photostability of the sample at a high temperature and high relative humidity(85℃,85%RH)was tested.It is found that the stability improved.Results provide experimental basis for the practical application of advanced perovskite-based lasers.

关 键 词:激光光学 钙钛矿 CsPbBr3纳米棒 光增益 放大自发辐射 稳定性 

分 类 号:O472[理学—半导体物理]

 

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