IGBT热可靠性分析简述  

A Brief Analysis of the Thermal Reliability of IGBT

作　　者：尹丽晶[1,2] Yin Li-jing(The 13th Research Institute,CETC,Hebei Shijiazhuang 050051;National Semiconductor Device Supervision and Inspection Center,Hebei Shijiazhuang 050051)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051 [2]国家半导体器件质量监督检验中心,河北石家庄050051

出　　处：《电子质量》2020年第8期27-30,共4页Electronics Quality

摘　　要：IGBT器件被认为是一种可用于需要高压、大电流和高速应用领域的理想功率器件,驱动功率小而饱和压降低。该文对IGBT器件的基本原理及其主要热失效模式进行了简要介绍,并提出了改进意见。IGBT devices are considered to be ideal power devices for applications requiring high voltage,high current and high speed,with low driving power and low saturation voltage drop.In this paper,the basic principle and main thermal failure modes of IGBT devices are briefly introduced,and some suggestions are proposed.

关 键 词：IGBT 基本原理 热失效 

分 类 号：TN322.8[电子电信—物理电子学]