GaSb热光伏电池的p层设计优化  

Design Optimization of p-Layer for GaSb Thermophotovoltaic Cell

作　　者：靳果[1,2] 朱清智 Jin Guo;Zhu Qingzhi(College of Electromechanical Automation,Henan Polytechnic Institute,Nanyang 473000,China;Institute of Photonics and Photon-Technology,Northwest University,Xi'an 710069,China)

机构地区：[1]河南工业职业技术学院机电自动化学院,河南南阳473000 [2]西北大学光子学与光子技术研究所,西安710069

出　　处：《微纳电子技术》2020年第8期665-673,共9页Micronanoelectronic Technology

基　　金：河南省2020年科技发展计划资助项目(202102210134);2019年南阳市科技计划项目(KJGG078)。

摘　　要：GaSb热光伏电池结构中的p-GaSb层是主要的光子吸收区。为了改善p-GaSb层的性能从而提高电池的转换效率等指标,首先研究了不同衬底温度和电池前电极对p-GaSb薄膜材料性能的影响,然后在此基础上进一步优化了电池p-GaSb层的厚度和掺杂浓度,并引入分层制备pGaSb层的方法。测试结果表明,衬底温度对p-GaSb薄膜材料的结晶质量、电学特性和光学特性有显著影响,不同的前电极影响p-GaSb薄膜的内部结构和电池的光电转换性能,采用500℃衬底温度和ZnO作为电池前电极是最优的制备条件。采用p+-GaSb/p-GaSb的分层结构并优化p+-GaSb层和p-GaSb层的厚度和掺杂浓度后,制备出了转换效率分别为9.13%(AM1.5光照测试)和20.32%(AFORS-HET模拟1450 K热辐射)的热光伏电池。The p-GaSb layer is a main photon absorption region in the structure of GaSb thermophotovoltaic cells.In order to improve the performance of the p-GaSb layer and thus improve the conversion efficiency and other indexes of the cell,the effects of different substrate temperatures and cell front electrodes on the properties of the p-GaSb thin film materials were studied firstly.Then on this basis,the thickness and doping concentration of the p-GaSb layer for the cell were further optimized,and the layer-by-layer method of preparing the p-GaSb layer was introduced.The test results show that the substrate temperature has a significant effect on the crystal quality,electrical and optical properties of p-GaSb thin films materials.Different front electrodes affect the internal structure of p-GaSb thin films and the photoelectric conversion performances of the cells.The optimal preparation conditions are the substrate temperature of 500℃and with ZnO as the front electrode of the cells.The thermophotovoltaic cells with the conversion efficiencies of 9.13%(AM1.5 lighting measurement)and 20.32%(AFORS-HET simulation of1450 K thermal radiation)were fabricated by using p+-GaSb/p-GaSb layer-by-layer structure and optimizing the thicknesses and doping concentrations of p+-GaSb layer and p-GaSb layer.

关 键 词：衬底温度 前电极 厚度 掺杂浓度 AM1.5光照测试 AFORS-HET模拟 

分 类 号：TM914[电气工程—电力电子与电力传动]