硼镓共掺多晶硅背钝化太阳电池的光衰研究  

DEGRADATION OF B/Ga CO-DOPED POLYSILICON PERC CELLS

作　　者：贺海晏[1] 权微娟[1] 单伟[1] 王仕鹏[1] 黄海燕[1] 陆川[1] He Haiyan;Quan Weijuan;Shan Wei;Wang Shipeng;Huang Haiyan;Lu Chuan(Chint Solar(Zhejiang)Co.,Ltd.,Hangzhou 310053,China)

机构地区：[1]浙江正泰太阳能科技有限公司,杭州310053

出　　处：《太阳能学报》2020年第7期99-104,共6页Acta Energiae Solaris Sinica

摘　　要：研究同一小硅锭中不同部位的硼镓共掺多晶硅片制备成背钝化太阳电池后,不同的电池效率和光衰情况,并研究经过同样的抗光衰处理后这些电池的光衰情况。测试结果显示,硅锭尾部位置的硅片具有最高的电阻率、最高的氧含量、最低的硼、镓含量及最高的杂质含量。将硅锭不同位置的硅片经过量产产线制成背钝化电池后,头部硅片得到的电池片的平均转换效率为19.08%,中部硅片得到的电池片的平均转换效率平均效率为19.15%,尾部硅片得到的电池片的平均转换效率为19.06%。光衰结果显示,对于未经过抗光衰处理的电池片,头部和中部位置具有较低的光衰比例,而尾部位置具有较高的光衰比例;电池片经过抗光衰处理后,不同位置对应的电池片都有效率提升,继续经过光衰测试后,尾部位置出现较明显的抗光衰效果。该研究对硼镓共掺多晶硅片生产和多晶背钝化电池抗光衰工艺具有指导意义。In this work,the effiency and degradation of B/Ga co-doped polysilicon PERC cells produced by wafers of different locations are investigated.The test results show that the wafers in the end of ingot have highest resistivity and oxygen concentration,lowest B and Ga concentration,and highest impurity content.The average effiency of PERC cells produced by wafers in top,middle and end of the ingot are 19.08%,19.15%and 19.06%,respectively.The degradation test shows that cells produced by wafers of top and middle of the ingot have lower degradation ratio,while the cells produced by wafers at end of the ingot have higher degradation ratio.After the anti-light-induced-degradation process,all the cells have promotions in effiency.Afterwards,the cells produced by wafers at end of the ingot show obvious anti-degradation result.This work provides guidance to the fields of B/Ga co-doped wafers’production and anti-degradation of polysilicon PERC cells.

关 键 词：多晶硅 硅太阳电池 光衰 硼镓共掺 背钝化太阳电池 

分 类 号：TK514[动力工程及工程热物理—热能工程]