脉冲偏压占空比对磁控溅射制备ITO薄膜光电性能的影响  

The Influence of the Duty Cycle of Pulse Bias on the Optoelectronic Properties of ITO Films Deposited by Magnetron Sputtering

作　　者：霍秋红 张翔 王昆仑[1] 刘学男 王婉霞 孙珲 Huo Qiuhong;Zhang Xiang;Wang Kunlun;Liu Xuenan;Wang Wanxia;Sun Hui(School of Space Science and Physics,Shandong University,Shandong,Weihai,264209;School of Mechanical,Electrical&Information Engineering,Shandong University,Shandong,Weihai,264209)

机构地区：[1]山东大学空间科学与物理学院,山东威海264209 [2]山东大学机电与信息工程学院,山东威海264209

出　　处：《科技智囊》2020年第8期50-53,共4页Think Tank of Science & Technology

基　　金：山东省自然科学基金(No.ZR2018QEM002)。

摘　　要：作为应用最为广泛的ITO透明导电薄膜一直是材料和电子领域研究的热点之一。实验利用磁控溅射方法制备了不同脉冲偏压占空比的ITO薄膜。采用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、紫外-可见光分光光度计和霍尔效应测量仪分别对薄膜的微观结构、表面形貌和光电特性进行了测试分析。结果表明:占空比变化对ITO薄膜性能有着显著的影响。薄膜存在(211)(222)和(440)三个衍射峰,择优取向随着占空比的改变而改变,而且不同的占空比导致薄膜的晶粒尺寸发生了明显的变化。另外,随着占空比增加,薄膜的透过率和电阻率呈现非线性变化的趋势,薄膜在560纳米波段有97%的高透过率。当占空比为20%时,薄膜具有最低电阻率(2.70×10-4Ω·cm)和最高可见光平均透过率(89.58%),此时薄膜的光电性能相对最佳。As a widely used transparent conductive oxides widely used,tin doped indium oxide(ITO)is always the hotspot in the fields of electronic materials.ITO thin films with different pulse bias duty cycle were prepared by magnetron sputtering.The X-ray diffraction(XRD),field emission scanning electron microscopy(FESEM),ultraviolet visible light spectrophotometer and Hall effect measurement were used to test the films’microstructure,surface morphology and photoelectric properties.The results show that the change of duty ratio has a significant influence on the performance of ITO films.Three orientations of(211)(222)and(440)of ITO films were detected,Meanwhile,the grain sizes of the films changed obviously with different duty cycles.With the duty cycle increasing,the transmittance and resistivity of the films showed a trend of nonlinear variation,and the films had a high transmittance of 97%at 560 nm.When the duty cycle is 20%,the film has the lowest resistivity(2.70×10-4Ω·cm)and the highest average transmittance(89.58%),which means it has the best photoelectric property.

关 键 词：ITO薄膜 磁控溅射 占空比 光电性能 

分 类 号：TB383[一般工业技术—材料科学与工程]