多单元逆导型IGBT电压回跳现象的抑制策略研究  

Research on Suppression Strategy of Snapback Effect of RC-IGBT With Multiple Cells

作　　者：常中科 犬石昌秀 唐厚君[1] CHANG Zhong-ke;INUISHI Masahide;TANG Hou-jun(Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]上海交通大学,上海200240 [2]早稻田大学院,生产信息系统研究科,日本北九州8080135

出　　处：《电力电子技术》2020年第7期124-127,共4页Power Electronics

摘　　要：逆导型绝缘栅双极型晶体管(RC-IGBT)在从单极性导通模式切换至双极性导通模式的过程中,存在特有的电压回跳现象,影响了器件的可靠性,增大了开关损耗。此处对RC-IGBT的导通过程进行了详细的理论分析,针对造成电压回跳现象的横向电子电流,使用微元法建立了电流微分模型,提出了一种通过优化器件底面布局来抑制电压回跳的解决策略,并给出了增加并联MOSFET单元数量、适当减小N^+短路区长度、调整N^+短路区位置等具体实施方案。该研究利用Silvaco TCAD仿真软件,结合半导体生产工艺,实现了实物RC-IGBT芯片的无回跳输出特性,有力验证了所提抑制策略的有效性,为RC-IGBT的设计提供了有价值的参考。Snapback effect of reverse conducting insulated gate bipolar translator(RC-IGBT)happens when the device turns from unipolar mode to the bipolar mode during the turn-on process,which will influence the reliability of device and increase the switch loss.The turn-on process of RC-IGBT and build the mathematical physic model of the lateralflowing electron current by using the infinitesimal method is analyzed.A strategy of suppressing the snapback effect by optimizing the backside layout of devices is proposed.There are several specific methods of operation,such as increasing the number of MOSFET cells in parallel,decreasing the length of N^+short area properly or adapting the relative position of N^+short area.By using Silvaco TCAD simulation software and combining the semiconductor fabrication process,The snapback-free output characteristic of RC-IGBT devices is achieved,which verifies the availability of proposed suppression strategy.Research provides a significant reference for the design of RC-IGBT.

关 键 词：逆导型绝缘栅双极型晶体管 电压回跳现象 横向电子电流 

分 类 号：TN32[电子电信—物理电子学]