借鉴日本专利技术,促进国内高导热氮化硅基片产业化  

Promotion of Domestic Industrialization of High Thermal Conductivity Silicon Nitride Substrates from Lessons of Japanese Patented Technology

作　　者：李贵佳[1] LI Guijia(Material Engineeering Invention Examination Department,State Intellectual Property Office of the PeopleJ s Republic of China,Beijing 102206,China)

机构地区：[1]国家知识产权局专利局材料工程发明审查部,北京102206

出　　处：《中国陶瓷》2020年第8期1-8,共8页China Ceramics

摘　　要：随着半导体集成模块发热量巨增,市场急需高导热陶瓷基片,介绍了高导热陶瓷基片的种类、特点和市场主要供应商,明确了氮化硅陶瓷基片具有高热导、高强高韧、热膨胀适应性良好等特点,以其突出的综合性能适应于第三代半导体芯片的发展方向,针对我国氮化硅基片仍未产业化,本文总结了全球主要供应商日本企业在华专利技术,为我国氮化硅基片产业化提供技术情报和专利预警。With the rapid increase of heat generation of semiconductor integrated modules,the market urgently needs of high thermal conductivity ceramic substrates.This paper introduces the types,characteristics and main suppliers of high thermal conductivity ceramic substrates,defining the silicon nitride substrates have the characteristics of high thermal conductivity,high strength,high toughness and good thermal expansion adaptability.As well as the outstanding comprehensive performance,it is suitable for the development direction of the third generation of semiconductor chip.As China’s silicon nitride substrate is still not industrialized,this article summarizes the patented technology of major global suppliers Japanese companies in China,providing technical intelligence and patent warning for the Chinese industrialization of silicon nitride substrates.Aiming at the industrialization of silicon nitride substrate in china,the paper summarizes the Chinese patent technology of global major suppliers Japanese companies,providing technical information and patent warning for the Chinese industrialization of silicon nitride substrate.

关 键 词：氮化硅 基片 高导热 专利 产业化 

分 类 号：TQ174.758.12[化学工程—陶瓷工业]