一种基于氮化镓晶体管的DC/DC电源模块  

An DC/DC Power Converter Module with GaN HEMT

作　　者：王鑫 徐林 刘阔 WANG Xin;XU Lin;LIU Kuo(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团第十三研究所,河北石家庄050051

出　　处：《通信电源技术》2020年第11期36-38,共3页Telecom Power Technology

摘　　要：随着电力电子技术的进步,开关电源越来越趋向于高频化和小型化。继硅和砷化镓之后出现的第三代半导体材料氮化镓(GaN)是一种宽禁带半导体材料,具有临界击穿电场大、电子迁移率高及导热率高等特点。氮化镓晶体管适用于高频、高压、高温等场合。因此,使用氮化镓晶体管代替硅基MOSFET,设计了一款带有同步整流功能的硬开关半桥DC/DC电源模块,输入电压36~60 V,输出28 V/5 A,初级氮化镓晶体管开关频率400 kHz,输出纹波频率800 kHz。测试结果表明:使用氮化镓晶体管可以使DC/DC电源模块工作在较高频率而不会带来效率的大幅下降,同时使用小型LC滤波器即可实现低输出纹波。With the progress of power electronics,the tendency of power converters is high-frequency and high power density. Gallium Nitride(GaN) is the third generation semiconductor materials after silicon and gallium arsenide. GaN is wide band gap semiconductor materials which has the characteristics of high saturation electron velocity,high critical breakdown field strength,high electron mobility and high thermal conductivity. GaN HEMTs are suitable for power converters which work in high frequency,high voltage and high temperature condition. A DC/DC power converter module with hard-switching half-bridge and synchronous rectification is designed on GaN HEMT instead of Si MOSFET. The input voltage is 36 ~ 60 V and the output characteristic is 28 V/5 A. The switching frequency of the primary GaN HEMTs is 400 kHz,and the output voltage ripple frequency is 800 kHz. The test results show that:GaN HEMT can make the DC/DC power converter switching at a higher frequency without significant efficiency decrease,and a small LC filter can achieve low output ripple.

关 键 词：氮化镓 DC/DC 电源模块 高频 

分 类 号：TM46[电气工程—电器]