悬空车轮形氮化镓发光二极管  

Floating GaN Micro Wheel Light Emitting Diodes

作　　者：朱刚毅[1] 仇国庆 秦飞飞 刘威 袁佳磊 施政 王永进 徐春祥[2] ZHU Gang-yi;QIU Guo-qing;QIN Fei-fei;LIU Wei;YUAN Jia-lei;SHI Zheng;WANG Yong-jin;XU Chun-xiang(College of Telecommunications and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,China;State Key Laboratory of Bioelectronics,Southeast University,Nanjing 210096,China)

机构地区：[1]南京邮电大学通信与信息工程学院,江苏南京210003 [2]东南大学生物电子学国家重点实验室,江苏南京210096

出　　处：《发光学报》2020年第9期1146-1152,共7页Chinese Journal of Luminescence

基　　金：江苏省优秀青年基金(BK20180087);中国博士后科学基金(2018M6305);南京邮电大学研究启动基金(NY219147)资助项目。

摘　　要：减少器件的界面损耗从而提升其发光性能一直是发光二极管领域一个重要的研究热点。本文采用标准半导体工艺在硅衬底上制备了GaN基车轮形发光器件。采用各向同性湿法蚀刻工艺将器件悬空,比较并研究了悬空对器件的性能,包括光强、半高宽、波长漂移、3 dB带宽等的影响。由于减小了光损耗,在悬空结构中腔效应更加明显,器件的电致发光和通信性能得到了提升。本研究对电驱动光源的制备和可见光通信具有重要意义。Optical loss reducing and brightness improvement are always attractive issues for light emitting diodes.In this paper,GaN based micro wheel light emitting devices(LED)are fabricated on silicon substrate by standard semiconductor technology.Isotropic wet etching process is applied to suspend the device thus optimize the device performance.Electroluminescence(EL)characteristics including the spectral intensity,full width at half maximum(FWHM),turn-on voltage and current induced wavelength shift,communication characteristics such as 3 dB bandwidth of two GaN micro wheels are studied and compared.Due to the reducing of optical loss,cavity effect is more obvious in the floating structure,and the improved EL and communication performance are obtained.The research in this paper is of great significance for the preparation of the electrically pumped light source and the visible light communication.

关 键 词：发光二极管 氮化镓 车轮形微腔 3 dB带宽 

分 类 号：TN312.8[电子电信—物理电子学] O439[机械工程—光学工程]