1.55μm单光子源用Si/SiO2-InP微柱腔的鲁棒性研究  

Fabrication imperfection effect on Si/SiO2-InP micropillar cavities for 1.55μm single photon source

作　　者：黄帅 张伟[1] 席琪 赵新华 谢修敏 徐强 周强 宋海智[1,2] HUANG Shuai;ZHANG Wei;XI Qi;ZHAO Xinhua;XIE Xiumin;XU Qiang;ZHOU Qiang;SONG Haizhi(Southwest Institute of Technical Physics, Chengdu 610041, China;Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China)

机构地区：[1]西南技术物理研究所,成都610041 [2]电子科技大学基础与前沿研究院,成都610054

出　　处：《激光技术》2020年第5期532-537,共6页Laser Technology

基　　金：四川省科技厅应用基础重点资助项目(2018JY0084)。

摘　　要：为了评估实际制备中工艺偏差对此前设计的Si/SiO2-InP微柱腔性能的影响,采用了基于有限时域差分法的模拟仿真,从工艺缺陷以及工艺误差两个角度,模拟了非理想工艺条件对Si/SiO2-InP微柱腔性能的影响。结果表明,在目前可达到的加工精度下,如椭圆因子为0.1、锥形侧壁角度为3°、尺寸误差为5%,Si/SiO2-InP微柱腔仍能保持满足应用需求的性能,证明了设计的1.55μm量子点单光子源有很高的鲁棒性。该研究为通信波段单光子源提供了切实可行的方案。In order to the evaluate the non-ideal fabrication on the performance of our Si/SiO2-InP microcavity,a simulation based on the finite difference time domain method was used.From the perspective of process defects and process errors,the effects of non-ideal process conditions on the performance of Si/SiO 2-InP micro-pillar cavities were simulated.The simulation results suggest the robustness against processing imperfection and the application feasibility of the hybrid Si/SiO2-InP micropillar cavities as 1.55μm quantum dot single photon sources to be applied in silica-fiber-based quantum information processing.

关 键 词：光学器件 鲁棒性 有限时域差分法 微腔 单光子源 通信波段 

分 类 号：O439[机械工程—光学工程]