掺氧纳米硅局域态中的电子自旋能级展宽效应  

Effect of spin levels broadening in electronic localized states of oxygen-doped nanosilocon localized state

作　　者：李鑫[1] 黄忠梅 刘世荣[3] 彭鸿雁[2] 黄伟其 Li Xin;Huang Zhong-Mei;Liu Shi-Rong;Peng Hong-Yan;Huang Wei-Qi(College of Materials and Metallurgy,Guizhou University,Guiyang 550025,China;College of Physics&Electronic Engineering,Hainan Normal University,Haikou 571158,China;State Key Laboratory of Environment Geochemistry,Institute of Geochemistry,Chinese Academy of Sciences,Guiyang 550003,China)

机构地区：[1]贵州大学材料与冶金学院,贵阳550025 [2]海南师范大学物理与电子工程学院,海口571158 [3]中国科学院地球化学研究所,环境化学国家重点实验室,贵阳550003

出　　处：《物理学报》2020年第17期121-126,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11847084)资助的课题.

摘　　要：本文发现很有趣的量子效应,纳米硅表面掺杂氧而形成的电子局域态中电子自旋能级间隔会有明显的展宽,被约束在局域态中的电子自旋±1/2能态间距被展宽两个数量级,达到100 meV左右.本文用纳秒脉冲激光在氧氛围中制备了掺杂氧纳米硅结构并形成电子局域态,在实验检测中探测到了电子自旋能级展宽效应;用第一性原理模拟计算方法研究了电子自旋能级展宽效应,具体地对于纳米硅量子点和量子层结构表面的硅氧双键与硅氧桥键局域态中的电子自旋量子态分别进行了模拟计算研究,证实了实验结果.结合实验与计算研究结果分析,建立起电子自旋能级展宽效应的物理模型.这些工作在量子信息高保真存储与处理上会有很好的应用.It is interesting that the electronic spin gap is opened in the localized states of nanosilicon doped with oxygen,where spin splitting of the individual two-level±1/2 states isolated in the localized states increases by 1−2 order of magnitude(on the order of 100 meV).The opening spin level effect in the localized states is observed in experiment,which originates from the twin states of quantum vibration measured in the photovaltaic system consisting of the quantum dots and the quantum layers of silicon prepared by using a pulsed laser in an oxygen environment.The opening spin level effect in the localized states is investigated by using density functional theory(DFT)in the simulation models of the quantum dots and the quantum layers of silicon with Si=O bond or Si-O-Si bond on surface.The detailed simulating calculations show that the broader splitting gaps of the electronic spin polarization confined at the individual impurity atoms occur in the localized states,which are consistent with experimental results.A physical model is built to explain the opening spin levels effect,in which the opening spin level effect mechanism in the localized states originates from the quantum confinement at doping atom.The opening spin level effect will improve the fidelity of information stored and processed within such a spin qubit.

关 键 词：电子自旋 局域态 掺杂纳米硅 带谷劈裂 量子震荡 

分 类 号：O469[理学—凝聚态物理] TB383.1[理学—电子物理学]