高压直流断路器组件内IGBT关断瞬态电压过冲的关键影响参数  

Key Influencing Factors on the Turn-off Transient Voltage Overshoot of IGBT in the Module of High Voltage DC Circuit Breaker

作　　者：刘欣[1] 王利桐 梁贵书[1] 齐磊[2] LIU Xin;WANG Litong;LIANG Guishu;QI Lei(Department of Electrical Engineering,North China Electric Power University,Baoding 071003,China;State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University,Beijing 102206,China)

机构地区：[1]华北电力大学电力工程系,保定071003 [2]华北电力大学新能源电力系统国家重点实验室,北京102206

出　　处：《高电压技术》2020年第8期2654-2662,共9页High Voltage Engineering

基　　金：国家重点研发计划(2017YFB0902400).

摘　　要：基于绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)的全控型混合式高压直流断路器是多端柔性高压直流输电工程的关键设备,其半导体组件内IGBT关断瞬态电压过冲是工程中需重点关注的问题,该文以典型的IGBT全桥拓扑结构的半导体组件为例,研究了半导体组件内部的母排杂散电感对IGBT关断瞬态电压过冲的影响,揭示了母排杂散电感对IGBT关断瞬态电压过冲的影响机理,获得了IGBT关断瞬态电压过冲关于组件内不同母排中杂散电感的灵敏度;在研究高压直流断路器中IGBT关断机理的基础上获得了包括IGBT器件本身的物理特性参数在内的影响关断瞬态电压过冲的关键参数及其影响规律,最后通过试验验证了理论分析的正确性。研究结果表明:组件内电容支路杂散电感对IGBT关断瞬态电压影响最大,其应作为重点优化对象;除杂散电感外,IGBT的栅极氧化层电容、关断过程集射极电压快速上升时对应的拐点电压以及栅极驱动电阻为影响IGBT关断瞬态电压的关键参数,且均与关断瞬态电压呈负相关性。该研究结论可为半导体组件内部杂散电感的控制、栅极驱动电阻的选择以及IGBT器件的选型或定制提供指导。High voltage direct current(DC)circuit breaker based on fully-controlled electronic devices of insulated gate bipolar transistor(IGBT)is the key equipment for the multi-terminal flexible HVDC transmission engineering.The turn-off transient voltage overshoot of IGBTs in semiconductor module is a key problem needed to be paid attention in engineering.Taking the typical semiconductor module with IGBT full-bridge topology as an example,we firstly investigate the influence of busbar stray inductance in the module on the IGBT turn-off transient voltage overshoot.The influencing mechanism of busbar stray inductance at different positions on the IGBT turn-off transient voltage overshoot is revealed and the corresponding influencing sensitivities are obtained.Subsequently,based on the analysis about the turn-off mechanism of IGBT in high voltage DC circuit breaker applications,the key influencing factors,which include the physical character parameters of IGBT itself,and corresponding influencing laws on the IGBT turn-off transient voltage overshoot are obtained.Finally,the correctness of the analyses is verified by experiments.The research results show that the stray inductance of the capacitor branch in the module has the greatest influence on the IGBT turn-off transient voltage and it should be treated as the key optimization object.In addition to stray inductance,the gate oxide capacitance of IGBT,the knee voltage for the rapid rise of collector-emitter voltage during the turn off process and the gate driving resistance are key parameters influencing the IGBT turn-off transient voltage,and all of them have negative correlations with the turn off transient voltage.The conclusions obtained in this paper can provide guidance for the control of stray inductance in the module,the determination of driving resistance,and the selection or customization of IGBTs.

关 键 词：高压直流断路器 半导体组件 杂散电感 驱动电阻 瞬态电压过冲 

分 类 号：TM561[电气工程—电器] TN322.8[电子电信—物理电子学]