碲镉汞集成偏振探测器应力分析  

Integrating polarizer with infrared HgCdTe detector′s stress analysis

作　　者：林国画[1] 徐长彬[1] 吴卿[1] 李雪梨 LIN Guo-hua;XU Chang-bin;WU Qing;LI Xue-li(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2020年第9期1104-1108,共5页Laser & Infrared

摘　　要：红外碲镉汞集成偏振探测器的结构是采用多个芯片叠层的方式,由于各层的材料不同,热膨胀系数不同,在低温下工作时各层界面之间存在应力,应力控制的不好会造成芯片裂片等情况,导致探测器性能劣化或无法使用。本文对长波320×256碲镉汞集成偏振探测器的裂片现象进行了分析,对存在的应力运用软件进行了仿真,得到了碲镉汞芯片上的应力值及减小应力的方向。针对仿真分析的结果进行了相应的铟柱降低、碲锌镉衬底减薄的试验,解决了碲镉汞集成偏振探测器的裂片现象。Integrating Polarizer with Infrared HgCdTe Detector'sstructureis chip stacking,because the different materials of the layers,the thermal expansion coefficient are different,and there is stress between the interfaces of the layers when working at low temperatures.Stress will cause chip splitting,etc.,resulting in poor detector performance or unusability.In this paper,the stress of LW320×256 integrating polarizer with infrared HgCdTedetector is simulated using software,and the influence of the stress and the direction of reducing the stress are clarified.According to the results of simulation analysis,experiments were carried out to reduce the indium column and thin the substrate to solve the split phenomenon.

关 键 词：碲镉汞集成偏振探测器 应力 铟柱 减薄 

分 类 号：TN216[电子电信—物理电子学]