多晶硅发射极晶体管电流增益工艺稳定性研究  

Study on Process Stability of Current Gain for Polysilicon Emitter Transistor

作　　者：阚玲[1] 刘建 KAN Ling;LIU Jian(The 24th Research Institute of China Electronics Technology Group Corp.,Chongqing400060,P.R.China;Chongqing SEMI-Chip Electronics Co.Ltd.,Chongqing401332,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]重庆中科渝芯有限公司,重庆401332

出　　处：《微电子学》2020年第4期589-592,共4页Microelectronics

摘　　要：针对多晶硅发射极晶体管实际工艺中出现的电流增益异常波动问题,首先从原理上进行了分析,其次通过与正常批次PCM数据进行对比,发现基极电流Ib存在一个量级的差异。设计了较为完整的DOE工艺试验,进行了对比和验证。结果表明,多晶硅/硅界面氧化层厚度一致性差、波动大是电流增益异常波动的主要原因。该研究结果为解决类似问题提供了有价值的参考。The reason of abnormal current gain fluctuation of polysilicon emitter transistor was analyzed theoretically. Through the comparison with the correct PCM data, the obvious difference of I_b(base current) was found. A complete DOE(Design of Experiment)was designed, compared and verified. The results showed that the poor consistency of interfacial oxide layer was the main reason for the abnormal fluctuation of current gain. The research result provided a valuable reference for solving the similar problems.

关 键 词：多晶硅发射极晶体管 电流增益 界面氧化层 自然氧化层 

分 类 号：TN322.8[电子电信—物理电子学]