氧通量对钒氧化物薄膜的可控制备  

Controllable preparation of Vanadium oxide film by adjusting oxide flux

作　　者：孙茂林 李雨桐 马可鑫 董浩男 侯晓轩 李子豪 景维军 宫震 SUN Maolin;LI Yutong;MA Kexin;DONG Haonan;HOU Xiaoxuan;LI Zihao;JING Weijun;GONG Zhen(School of Materials and Metallurgy,University of Science and Technology Liaoning,Anshan 114051,China;Research and Design of Institute,Censcience Industry CO.,LTD Liaoning,Liaoyang 111200,China)

机构地区：[1]辽宁科技大学材料与冶金学院,辽宁鞍山114051 [2]辽宁三三工业有限公司研究设计院,辽宁辽阳111200

出　　处：《辽宁科技大学学报》2020年第3期179-182,共4页Journal of University of Science and Technology Liaoning

基　　金：国家自然科学基金(51502126)。

摘　　要：磁控溅射纯V靶制备钒氧化物VOx薄膜,研究不同氧通量对VOx薄膜x值的调控。采用扫描电子显微镜、X射线衍射仪、拉曼光谱仪和霍尔效应仪对薄膜形貌、结构和电学性能进行表征。结果表明:随着氧通量的增加,钒氧化物形貌由尖角较大颗粒逐渐圆滑缩小团聚,x值由1转变为1.5~2.5之间,最终接近2.5,同时电阻也逐渐增长。Films of Vanadium oxide VO x were prepared by magnetron sputtering with pure vanadium as the target.The x values of the films were controlled by regulating oxygen fluxes.Morphologies,structures,and electrical properties of the VOx films were characterized by SEM,XRD and Raman spectra,and Hall Effect system,respectively.The results show that big VOx particles with sharp corner gradually smoothed,shrank,and agglomerated with the increase in oxygen flux.The x value of the VOx films changed from 1 to 1.5~2.5,and finally approached to 2.5.Meanwhile,the resistance of the VOx films gradually increased.

关 键 词：VOx薄膜 磁控溅射 氧通量 

分 类 号：O484.4[理学—固体物理]