Sn掺杂量对Sn-Mg共掺杂ZnO薄膜光电性能的影响  

Effect of Sn-doped on photoelectric properties of Sn-Mg co-doped ZnO thin films

作　　者：王玉新[1] 王磊[1] 刘佳慧[1] 褚浩博 蔺冬雪 丛彩馨 WANG Yuxin;WANG Lei;LIU Jiahui;CHU Haobo;LIN Dongxue;CONG Caixin(School of Physics and Electronic Technology,Liaoning Normal University,Dalian 116029,China)

机构地区：[1]辽宁师范大学物理与电子技术学院,辽宁大连116029

出　　处：《辽宁师范大学学报（自然科学版）》2020年第3期327-332,共6页Journal of Liaoning Normal University:Natural Science Edition

基　　金：辽宁省教育厅科学研究基础项目(LJ2019006)。

摘　　要：采用超声喷雾热解法在石英衬底上制备了Sn-Mg共掺的ZnO纳米薄膜.借助X射线衍射仪(XRD),扫描电子显微镜(SEM),光致发光谱(PL谱),紫外-可见分光光度计(UV-Vis)和伏安特性曲线(I-V)等测试手段研究了Sn掺杂量的改变对薄膜的结构、形貌和光电性能的影响.结果表明,适量的Sn掺杂可以提高薄膜的表面形貌和光电性能.随着Sn掺杂量的增加,薄膜的(101)衍射峰强度、紫外发光峰、透过率和导电率都是先增加后减小,带隙能量值从3.350eV增加到3.651eV,并且平均透过率均在80%~87%之间.当Sn掺杂量为0.004时,薄膜结晶质量最好,表面最致密,晶粒大小最均匀,紫外发光峰强度最大,导电率最高.In this study,stannic and magnesium co-doped ZnO nano thin films which have structure of ZnSnMgO were deposited on the fused silica substrates using ultrasonicspray pyrolysis method.The effect of Sn doping content on the structure,morphology and photoelectric properties of the films was studied by means of X-ray diffraction(XRD)、the scanning electron microscopy(SEM)、the photoluminescence(PL)、the ultraviolet-visible spectrophotometer(UV-Vis)and the voltammetric characteristic curve(I-V).The results show that proper amount of Sn doping can improve the surface morphology and photoelectric properties of the films.With the increase of Sn doping content,the intensity of diffraction peak,UV emission peak,transmittance and conductivity of the films all increase at first and then decrease.The average transmittance of ZnO nanofilms co-doped with Sn-Mg is between 80% and 87%.With the increase of Sn doping content,the band gap energy increases from 3.350 eV to 3.651 eV.When the atomic ratio of Sn doping is 0.004,the crystallization quality of the films is the best,the surface of the film is the densest,the grain size is the most uniform,the intensity of UV emission peak is the highest,and the conductivity is the highest.

关 键 词：ZNO薄膜 超声喷雾热解法 Sn-Mg共掺 晶体结构 表面形貌 光电性能 

分 类 号：O484.4[理学—固体物理]