基于IR与UCEON(T)的IGBT结温测量方法对比分析  

Comparison and Analysis of IGBT Junction Temperature Measurement Methods Based on IR and UCEON(T)

作　　者：马天兆 贾英杰 罗毅飞[1] MA Tian-zhao;JIA Ying-jie;LUO Yi-fei(National Key Laboratory of Science and Technology on Vessel Integrated Powver System,Naval University of Engineering,Wuhan 430033,China)

机构地区：[1]海军工程大学,舰船综合电力国防科技重点实验室,湖北武汉430033

出　　处：《电力电子技术》2020年第9期138-140,共3页Power Electronics

基　　金：国家自然科学基金重大项目(51490681);国家重点基础研究发展计划(973计划)(2015CB251004)。

摘　　要：红外(IR)探测法与小电流饱和压降UCEON(T)法是两种目前常用的绝缘栅双极型晶体管(IGBT)结温测量方法,两种方法得到的结温存在区别与联系。针对此问题,此处首先对两种测量方法的基本原理及技术要点进行阐述;然后对基于UCEON(T)法的测温曲线进行标定;最后通过直流脉冲测试对两种结温测试结果进行对比分析。结果表明,IGBT芯片表面的温度分布存在明显的非均匀特性,随着采样点数量的逐渐增多,UCEON(T)法的温度测量结果更加趋近于IR探测法测得的芯片表面平均温度。The infrared radiation(IR)detection method and conduction voltage under small current UCEON(T)method are commonly used in the junction temperature measurement of insulated gate bipolar translator(IGBT)modules.There are differences and connections between the two methods.Based on this point,the basic principles and technical points of the two methods are described firstly.Then,the temperature measurement curve used in UCEON(T)method is calibrated.Finally,under the condition of a DC pulse test,the junction temperature is measured through the two methods,and the results are compared and analyzed.The results show that there is obvious non-uniform distribution characteristics of the surface temperature of IGBT chips.With the increase of the number of sampling points,the temperature measured by UCEON(T)method is closer to the average surface temperature of the chip measured by IR detection method.

关 键 词：绝缘栅双极型晶体管 结温 小电流 

分 类 号：TN32[电子电信—物理电子学]