沉积工艺参数对电弧离子镀薄膜沉积速率影响的研究进展  

Progress on Effects of Deposition Processing Parameters on Coatings Deposition Rate for Arc Ion Plating

作　　者：赵彦辉[1] 史文博[1] 刘忠海[1] 赵升升[2] 王铁钢[3] 于宝海[1] ZHAO Yanhui;SHIWenbo;LIU Zhonghai;ZHAO Shengsheng;WANG Tiegang;YU Baohai(Insitute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China;Shenzhen Polytechnic,Shenzhen 518055,Guangdong,China;Tianjin University of Technology and Education,Tianjin 300222,China)

机构地区：[1]中国科学院金属研究所材料表面工程研究部,沈阳110016 [2]深圳职业技术学院,广东深圳518055 [3]天津职业技术师范大学天津市高速切削与精密加工重点实验室,天津300222

出　　处：《真空与低温》2020年第5期385-391,共7页Vacuum and Cryogenics

基　　金：国家自然科学基金(51875555、51171197)。

摘　　要：阴极电弧离子镀技术作为工业应用最多的真空镀膜技术之一,近年来得到了长足发展。但是仍存在一些技术问题尚未完全解决,如大颗粒污染、所沉积的薄膜残余应力大、不能实现低温沉积等。另一方面,电弧离子镀的沉积效率仍有待提高,尽管与同属物理气相沉积(PVD)技术的磁控溅射相比,拥有较高的沉积速率,但对于沉积厚膜(厚度超过20μm甚至50μm)而言,其通常的沉积速率(一般在1~10μm/h内)较低,仍需要较长时间。针对这一问题,总结了不同沉积工艺参数对沉积速率的影响,综述了近年来电弧离子镀技术在提高沉积速率方面的研究进展,以期对该技术的发展提供一定的技术支持。As one of most industrial applications of vacuum coating technology,cathodic arc ion plating technology has obtained the rapid development in recent years.But there are still some technical problems which have not been fully resolved,such as large particle pollution,large residual stress for the deposition of coating,and not being realized low temperature deposition,etc.On the other hand,the deposition efficiency of arc ion plating remains to be improved,although it has much higher deposition rate than that magnetic sputtering both of which belongs to the same physical vapor deposition technology,But for large thickness of coatings(more than 20 microns or even 50 microns),its usual deposition rate(generally in the range of 1 to 10μm/h)still need a very long time.Aimed at this problem,this present work summarizes the effects of different process parameters on deposition rate,and the recent progress in the arc ion plating technology for improving the deposition rate was summarized,in order to provide certain technological support for the development of the technology.

关 键 词：电弧离子镀 沉积速率 磁场 辅助阳极 

分 类 号：O484[理学—固体物理] TB43[理学—物理]