单晶-多晶金刚石的拼接工艺研究  

Research on Combining Technology of Single-crystalline and Polycrystalline CVD Diamond

作　　者：陈梦唤 易剑 满卫东[1] 江南[2] CHEN Menghuan;YI Jian;MAN Weidong;JIANG Nan(School of Materials Science and Engineering,Wuhan Institute of Technology,Wuhan 430074,Hubei,China;Ningbo Institute of Materials Technology&Engineering,Chinese Academy of Sciences,Ningbo 315201,Zhejiang,China)

机构地区：[1]武汉工程大学材料科学与工程学院,湖北武汉430074 [2]中国科学院宁波材料技术与工程研究所,浙江宁波315201

出　　处：《陶瓷学报》2020年第5期700-707,共8页Journal of Ceramics

基　　金：宁波市“科技创新2025”重大专项(2018B10046);国家重点研发计划(2017YFE0128600);宁波市“3315计划”(2019A-18-C);国防重点实验室基金(6142807180511,6142905192806);河南省科技攻关项目(192102210244)。

摘　　要：以多晶金刚石作为支架,单晶金刚石作为镶嵌体,通过微波等离子体化学气相沉积法在950℃和1.0%甲烷浓度下制备了结晶质量较好的单晶-多晶金刚石复合片。利用扫描电子显微镜(SEM)和显微拉曼光谱(Raman)和红外光谱(IR)等对复合片的界面进行了研究。结果表明:甲烷浓度低于1.0%时,界面拼接效果差、存在空隙,甲烷浓度大于1.0%时,单晶结晶质量和光透过率差,甲烷浓度对生长晶粒大小及表面粗糙度存在影响。同时在850℃、950℃、1050℃和1150℃四个不同温度制备了单晶-多晶金刚石复合片。通过SEM和Raman研究发现,沉积温度小于950℃时,金刚石形核质量较差,生长温度大于950℃时,单晶金刚石片表面出现多晶化,生长温度对晶型取向及生长速率等有较大影响。另外,通过红外热像仪对单晶金刚石、多晶金刚石和单晶-多晶金刚石复合片进行了研究,在0-100 s内,复合片的热传导速率较多晶金刚石片提升了24.2%。Single crystal-polycrystalline diamond composite wafers were developed by using microwave plasma chemical vapor deposition(MPCVD)at 950℃and methane concentration of 1.0%,with polycrystalline diamond as the support and single crystal diamond as the inlaid body.Interface of composite wafers was characterized by using scanning electron microscopy(SEM),microscopic Raman spectroscopy and infrared(IR)spectroscopy.When the methane concentration is lower than 1.0%,the interface is not well spliced,with the presence of gaps.As the methane concentration is higher than 1.0%,the single crystal has poor quality and light transmittance.In addition,the methane concentration has effects on both the size and surface roughness of the grains.At the same time,the effect of temperature(850℃,950℃,1050℃and 1150℃)was also evaluated.According SEM and Raman results,it is found that the optimal temperature is 950℃.Lower temperatures result in poor quality of diamond nucleation,while higher temperatures lead to polycrystallization of the diamond single crystal.The temperature has a great impact on crystal orientation and growth rate.Furthermore,the single-crystal diamond,polycrystalline diamond and composite wafers were all studied by using infrared thermography.It is observed that the heat conduction rate of the composite wafers is increased by 24.2%within 0-100 s.

关 键 词：金刚石 微波等离子体化学气相沉积 界面 拼接 热导率 

分 类 号：TQ174.75[化学工程—陶瓷工业]