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作 者:安涛[1] 吴禧梅 刘欣颖 AN Tao;WU Xi-mei;LIU Xin-ying(College of Automation and Information Engineering,Xi'an University of Technology,Xi'an 710048,China)
机构地区:[1]西安理工大学自动化与信息工程学院,西安710048
出 处:《光子学报》2020年第10期72-78,共7页Acta Photonica Sinica
基 金:陕西省自然科学基础研究计划(No.2019JM251)。
摘 要:采用双掺杂方法,实现了具有高陷阱浓度的有机光电倍增探测器.在优化的单掺杂(活性层为P3HT:PC61BM:C60)器件基础上,保持C60的最优掺杂比例不变(1.0 wt%),同时掺杂C60和DDQ两种电子陷阱,研究不同DDQ掺杂浓度对P3HT:PC61BM活性层中陷阱浓度和探测器光电性能的影响.结果表明,双掺杂C60:DDQ活性层的最大掺杂浓度为1.5 wt%,与单掺杂C60活性层(最大掺杂浓度为1.0 wt%)相比提高了约1.5倍;双掺杂C60:DDQ器件的陷阱浓度为2.02×10^18 cm^-3,与单掺杂C60器件(陷阱浓度为5.83×10^17 cm^-3)相比提高了约3.5倍;在-2 V偏压下,双掺杂C60:DDQ器件的外量子效率高达2015.32%,比单掺杂C60器件(外量子效率为202.60%)提高了约10倍.采用双掺杂方法可以大大提高陷阱浓度,从而实现活性层的高浓度陷阱掺杂.Organic photomultiplier detector with high trap concentration is developed by double doping method.By keeping the optimal doping ratio of C60 unchanged(1.0 wt%)based on the optimized singledoped device(active layer is P3HT:PC61BM:C60),while doping both C60 and DDQ electron traps,the effects of different DDQ doping concentrations on the trap concentration of the P3HT:PC61BM active layer and the photoelectric performance of the detector are studied.The study shows that the maximum doping concentration of the double-doped C60:DDQ active layer was 1.5 wt%,which is about 1.5 times higher than that of the single-doped C60 active layer(maximum doping concentration is 1.0 wt%).The trap concentration of the double-doped C60:DDQ device is 2.02×10^18 cm^-3,which is about 3.5 times higher than that of the single-doped C60 device(trap concentration is 5.83×10^17 cm^-3).Under the bias voltage of-2 V,the external quantum efficiency of the double-doped C60:DDQ device is as high as 2015.32%,which is about 10 times higher than that of the single-doped C60 device(external quantum efficiency is 202.60%).The results show that the double doping method can greatly increase the trap concentration,so as to realize the high concentration trap doping of the active layer.
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