芯片铜互连研究及进展  

Research Progresses of Copper Interconnection in Chips

作　　者：金磊 杨家强 杨防祖[1] 詹东平[1] 田中群[1] 周绍民[1] JIN Lei;YANG Jia-qiang;YANG Fang-zu;ZHAN Dong-ping;TIAN Zhong-qun;ZHOU Shao-min(College of Chemistry and Chemical Engineering,State Key Laboratory of Physical Chemistry of Solid Surfaces,Xiamen University,Xiamen 361005,Fujian,China)

机构地区：[1]固体表面物理化学国家重点实验室,厦门大学化学化工学院,福建厦门361005

出　　处：《电化学》2020年第4期521-530,共10页Journal of Electrochemistry

基　　金：国家自然科学基金项目(No.21972118,No.21827802)资助。

摘　　要：本文详细介绍芯片制造中铜互连技术,综述酸性硫酸铜电镀工艺要点及常用添加剂作用机理,并概述国内外新型添加剂研究进展.在此基础上,展望新型铜互连工艺替代酸性硫酸电镀铜工艺的可能性.In this paper,the copper interconnection technology in chip manufacturing is introduced in detail,and the essentials of acidic copper sulfate electroplating process and the mechanisms of common-used additives are reviewed.The progresses of novel additives at home and abroad are also summarized.Based on the studied achievement,the possibility of the novel copper interconnect process replacing the acidic copper electroplating is prospected.

关 键 词：芯片 铜互连 酸性硫酸铜电镀 添加剂 

分 类 号：O646[理学—物理化学] TQ153[理学—化学]