基于TCAD的脉冲作用下晶闸管反向恢复特性仿真研究  

Reverse recovery characteristics of high voltage thyristor induced by voltage pulse based on TCAD

作　　者：陈炫宇 陶风波 徐阳 庞磊[1] 张乔根[1] CHEN Xuanyu;TAO Fengbo;XU Yang;PANG Lei;ZHANG Qiaogen(School of Electrical Engineering,Xi’an Jiaotong University,Xi'an 710049,China;State Gad Jiangsu Eectric Power Co.,Ltd.Research Instituta,Nanjing 211103,China)

机构地区：[1]西安交通大学电气工程学院,陕西西安710049 [2]国网江苏省电力有限公司电力科学研究院,江苏南京211103

出　　处：《电力工程技术》2020年第5期185-190,共6页Electric Power Engineering Technology

基　　金：国家电网有限公司科技项目(SGJSDK00KJJS1800292,SGJSDK00ZPJS1900278)。

摘　　要：研究暂态脉冲电压作用下高压晶闸管反向恢复特性对换流阀参数设计、故障保护以及试验检测等具有重要意义。首先参照晶闸管实际结构,建立了晶闸管二维半导体仿真模型,基于载流子漂移扩散模型求解,仿真获得了晶闸管静态击穿特性和反向恢复电流特性,实验结果验证了仿真模型的有效性。在上述基础上,建立了半导体器件-电路仿真混合模型,并分析了正常导通和误触发导通时晶闸管内部电流密度变化的异同。仿真表明,反向恢复期间电压脉冲易导致晶闸管误触发,误触发电压随脉冲施加时刻后移而升高。Research on reverse recovery characteristics of high voltage thyristor induced by voltage pulse has important significance in parameter design,fault protection and test detection of converter valve. The thyristor two-dimensional semiconductor simulation model is built according to the actual structure of the thyristor. The static breakdown characteristics and reverse recovery current characteristics are simulated based on the carrier drift diffusion model. The validity of the model is checked by comparing with the experimental results. On the basis of the above,the device-circuit simulation hybrid model is established and the similarities and differences of the current density in the thyristor are analyzed and compared. The results show that voltage pulse can lead to the false triggering of the thyristor during the reverse recovery. The false tirggering voltage increases with the time at which voltage pulse is applied.

关 键 词：高压晶闸管 电压脉冲 反向恢复 暂态特性 半导体器件模拟工具(TCAD) 

分 类 号：TM461.4[电气工程—电器]