基于碳化硅中子探测器的实验研究  

Experimental study of silicon carbide neutron detectors

作　　者：唐彬 蔡军[1] 黄文博[1] 梁超飞 李长园[1,2] 李世斌 TANG Bin;CAI Jun;HUANG Wenbo;LIANG Chaofei;LI Changyuan;LI Shibin(Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201800,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海应用物理研究所,上海201800 [2]中国科学院大学,北京100049

出　　处：《辐射研究与辐射工艺学报》2020年第5期67-72,共6页Journal of Radiation Research and Radiation Processing

基　　金：中国科学院战略性先导科技专项(XDA02050100)资助。

摘　　要：碳化硅(SiC)中子探测器属于一种宽禁带半导体探测器,适合在高温强辐射环境下的测量。本文利用标准放射源建立了SiC中子探测器的实验测试系统,分别研究了SiC中子探测器在252Cf标准源及60Co标准源照射下的响应情况。通过实验测试发现,SiC中子探测器可以在低偏置电压下工作,在252Cf标准源照射下探测器的计数率与中子通量之间具有非常好的线性关系,其线性拟合R2值为0.9998。此外,SiC中子探测器在60Co源照射下的计数主要是在低能区,可以通过甄别阈值设置有效地分辨γ射线的影响。Silicon carbide(SiC)neutron detector is suitable for monitoring in elevated temperature and harsh radiation environment owing to its wide band gap.An experimental test system of SiC neutron detector was established using standard radioactive sources,and the responses of SiC neutron detector irradiated by 252Cf and 60Co standard sources were investigated,respectively.It was found that the SiC neutron detector could work at a low bias voltage,the R2 value of the linear fitting between the counting rate and the incident neutron flux of the detector is 0.9998 under the 252Cf source irradiation,which showed a very good linear relationship.In addition,the count of the SiC neutron detector under the 60Co source irradiation was observed mainly in the low-energy area,which could effectively distinguish the effect ofγ-ray by setting the discrimination threshold.

关 键 词：碳化硅 中子探测器 探测效率 

分 类 号：TL816.3[核科学技术—核技术及应用]