掺质极宽禁带半导体β-Ga2O3单晶光电性质调控研究进展  

Regulation of Growth and Photoelectric Properties of Dopedβ-Ga2O3 Single Crystal

作　　者：蒋孟飞 张乃霁 刘皓月 万玲玉[1] 覃善华[1] 夏长泰[2] JIANG Mengfei;ZHANG Naiji;LIU Haoyue;WAN Lingyu;QIN Shanhua;XIA Changtai(School of Physical Science and Engineering Technology,Guangxi University,Nanning 530004,China;Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

机构地区：[1]广西大学物理科学与工程技术学院,广西南宁530004 [2]中国科学院上海光学精密机械研究所,上海201800

出　　处：《中国照明电器》2020年第8期1-11,共11页China Light & Lighting

基　　金：中国科学院上海光学精密机械研究所科创计划(2019-28);国家自然科学基金(51972319)。

摘　　要：近年来,β-Ga2O3材料的研究和应用成为国际上的热点。由于β-Ga2O3禁带宽度大(4.8~4.9 eV),击穿场强高达8 MV/cm^3,其单晶可以通过多种熔体法生长,故β-Ga2O3是一种极具潜力的应用于大功率电子设备和深紫外(DUV)光电探测器的半导体材料。本文综述介绍了β-Ga2O3晶体的结构、光电性质和单晶生长方法,总结了不同掺质β-Ga2O3晶体的光学性质和电学性质。人们可以通过不同掺质对晶体的光电性质进行调控,以满足不同的应用目的。最后总结了β-Ga2O3晶体在功率器件、LED衬底和日盲探测器方面的应用。In recent years,β-Ga2O3 materials has become a hot research issue.Its band gap is large(4.8-4.9 eV),and its breakdown field strength is up to 8 MV/cm^3,andβ-Ga2O3 single crystal can be grown by a variety of methods.It is a promising semiconductor material for high-power electronic devices and deep ultraviolet(DUV)photodetectors.In this paper,we summarized the structural,optical and electrical properties ofβ-Ga2O3 crystal and the growth techniques.The performance ofβ-Ga2O3 materials can be modified through doping for different applications.Finally,we introduced the development and application ofβ-Ga2O3 crystals in power devices,LEDs and solar blind detectors.

关 键 词：宽禁带半导体 β-Ga2O3晶体 掺质 光学性质 电学性质 

分 类 号：TM23[一般工业技术—材料科学与工程]