基于肖特基二极管的宽带低本振功率太赫兹四次谐波混频器  

A wideband terahertz planar Schottky diode fourth-harmonic mixer with low LO power requirement

作　　者：杨益林[1] 张波[1] 纪东峰 王依伟 赵向阳[2] 樊勇[1] YANG Yi-Lin;ZHANG Bo;JI Dong-Feng;WANG Yi-Wei;ZHAO Xiang-Yang;FAN Yong(School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China;National Key Laboratory of Application Specific Integrated Circuit,Hebei Semiconductor Research Institute,Shijiazhuang 050000,China)

机构地区：[1]电子科技大学电子科学与工程学院,四川成都611731 [2]中国电子科技集团第十三研究所集成电路国家重点实验室,河北石家庄050000

出　　处：《红外与毫米波学报》2020年第5期540-546,共7页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(61771116,91738102).

摘　　要：介绍了基于反向并联肖特基二极管的宽带低驱动功率太赫兹四次谐波混频器。详细地分析了二极管寄生参量与混频器性能间的关系。为了降低四次谐波混频器的最佳本振功率,对肖特基二极管的主要参数进行了优化。实际测试结果显示,在7 mW的最佳本振功率驱动下,该四次谐波混频器在340~490 GHz的宽带内,变频损耗在14.2~20 dB之间。同时,该频段内的混频器噪声温度为4020~17100 K。A wideband terahertz fourth-harmonic mixer with low local oscillator(LO)power requirement based on anti-parallel planar Schottky diodes is proposed.In order to realize best performances of the mixer,the rela⁃tions between the parasitic elements of Schottky diodes and the mixer’s performances are analyzed.The main pa⁃rameters of Schottky diodes are optimized to reduce the optimum LO power of the fourth-harmonic mixer.Mea⁃sured results show that the conversion loss of the proposed mixer based on specialized diodes is 14.2~20 dB with⁃in a wide band from 340 to 490 GHz with optimal LO power of 7 mW,while the noise temperature is 4020~17100 K in this frequency range.

关 键 词：四次谐波混频器 低本振功率 肖特基二极管 太赫兹频段 宽带 

分 类 号：TN773.2[电子电信—电路与系统]