离子注入剥离铌酸锂单晶薄膜的Ar^+刻蚀研究  

Study on Ar^+ Etching of Crystal-Ion-Sliced Lithium Niobite Single Crystal Thin Film

作　　者：方远苹 罗文博[1] 郝昕 白晓园 曾慧中[1] 帅垚[1] 张万里[1] FANG Yuanping;LUO Wenbo;HAO Xin;BAI Xiaoyuan;ZENG Huizong;SHUAI Yao;ZHANG Wanli(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Chengdu Ultra Retina Photoelectric Technology Co.,Ltd.,Chengdu 611731,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]成都优蕊光电科技有限公司,四川成都611731

出　　处：《压电与声光》2020年第5期674-677,共4页Piezoelectrics & Acoustooptics

基　　金：四川省科技支撑基金资助项目(2018JY0127)。

摘　　要：通过高能离子注入剥离制备的铌酸锂(LNO)单晶薄膜具备优良的电光、声光等性能,在射频器件、光波导等领域需求迫切。高能离子注入使LNO单晶薄膜表面存在损伤层,导致薄膜质量和器件性能的衰减。该文提出了Ar^+刻蚀去除LNO单晶薄膜损伤层的方法,基于高能离子注入仿真,采用扫描电子显微镜、原子力显微镜分析了刻蚀参数对刻蚀速率、表面形貌的影响,并确定了LNO薄膜损伤层的刻蚀工艺参数。X线衍射分析表明,通过Ar^+刻蚀将LNO薄膜摇摆曲线半高宽减至接近注入前LNO单晶材料,压电力显微镜测试表明去除损伤层后的LNO单晶薄膜具备更一致的压电响应。The lithium niobite(LNO)single crystal thin film prepared by high-energy ion implantation and stripping has excellent electro-optical,acousto-optic properties,and is in urgent need in the fields of radio frequency devices and optical waveguides.However,the high-energy ion implantation leads to the existence of a damage layer on the surface of the LNO single crystal film,which results in the degradation of film quality and device performance.A method for removing damaged layer of LNO single crystal thin film by Ar^+ etching is proposed in this paper.Based on the simulation of high-energy ion implantation,the influence of etching parameters on the etching rate and surface morphology are analyzed by scanning electron microscope and atomic force microscope,and the etching parameters of the damaged layer of LNO film are determined.The X-ray diffraction analysis shows that the full-width at half maximum height of the rocking curve of the LNO film with Ar^+ etching is reduced to near that of the LNO single crystal material before implantation.The results of the piezoelectric force microscopy tests show that the LNO single crystal film after removing the damage layer has a more consistent piezoelectric response.

关 键 词：铌酸锂(LNO)单晶薄膜 表面损伤层 Ar^+刻蚀 晶体质量 压电性能 

分 类 号：TN384[电子电信—物理电子学]