等离子清洗工艺在HIC中运用可靠性研究  

Study on ReliabUity of Plasma Cleaning Process in Hybrid Integrated Circuit

作　　者：朱仁贤 左凤娟 王腾[1] ZHU Ren-xian;ZUO Feng-juan;WANG Teng(No.43 Research Institute of GETC,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第四十三研究所,合肥230088

出　　处：《混合微电子技术》2019年第4期77-82,共6页Hybrid Microelectronics Technology

摘　　要：等离子清洗工艺作为行之有效的改善手段在混合集成电路组装工艺中已广泛运用,同时混合集成电路中众多复杂的材料界面也给等离子清洗工艺的运用带来一定潜在的风险。本文讲述了镀金外壳DC/DC电源运用等离子清洗工艺后所组装的电容失效,通过对比排除法对设备、元件、所用材料、参数等进行逐一分析,并对失效元件表面进行EDS和SEM分析,电容失效原因为等离子清洗后电容表面附着一层Au,导致电容两端短路。Au层是由于等离子设备工作时Ar粒子撞击镀金表面使Au元素重新蒸镀。Plasma cleaning technology as an effective means of improvement has been widely used in the hybrid integrated circuit assembly process.At the same time,many complex material interfaces in the hybrid integrated circuit also bring some potential risks to the application of plasma cleaning technology.This paper describes the failure of the capacitor assembled by the DC/DC power supply with gold-plating case after the plasma cleaning process.The material parameters of the equipment components are analyzed one by one through the comparison and exclusion method,and the surface of the failed components is analyzed by EDS and SEM.The reason for the failure of the capacitor is that a layer of Au is attached to the surface of the capacitor after plasma cleaning,which causes a short circuit at both ends of the capacitor.The Au layer is due to the AR particles impacting on the gold-plated surface when the plasma equipment is working,which makes the Au element evaporate again.

关 键 词：等离子清洗 镀金 电容 溅射蒸镀 自我偏压 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN406