一种改进SiC MOSFET开关性能的有源驱动电路  

An Active Gate Driver for Improving Switching Performance of SiC MOSFET

作　　者：李先允[1] 卢乙 倪喜军[1] 王书征[1] 张宇[1] 唐昕杰 LI Xianyun;LU Yi;NI Xijun;WANG Shuzheng;ZHANG Yu;TANG Xinjie(Nanjing Institute of Technology,Nanjing 211167,Jiangsu Province,China)

机构地区：[1]南京工程学院,江苏省南京市211167

出　　处：《中国电机工程学报》2020年第18期5760-5769,共10页Proceedings of the CSEE

基　　金：江苏省重点研发计划项目(BE2018130);江苏省产学研合作项目(BY2019039)。

摘　　要：与硅金属氧化物半导体场效应管(silicon metal oxide semiconductor field effect transistor,SiMOSFET)相比,碳化硅(silicon carbide,SiC) MOSFET具有更高的击穿电压,更低的导通电阻,更快的开关速度和更高的工作温度,正被广泛应用于光伏逆变器、电动汽车和风力发电等领域,但是SiC MOSFET的高开关速度会导致器件开关过程中发生电流、电压过冲和振荡,不仅会增加器件的开关损耗,甚至会导致器件损坏。文中首先对SiC MOSFET的开关过程进行详细分析,得出器件开关过程中电流、电压过冲和振荡的产生机理,然后根据影响电流、电压过冲和振荡的关键因数,设计一款有源驱动电路。该电路能够在器件开关的特定阶段内同时增加驱动电阻阻值和减小栅极电流,从而抑制器件开关过程中的电流、电压过冲和振荡。实验结果表明,与传统驱动电路相比,所设计的有源驱动电路能够在不同驱动电阻、负载电流和SiC MOSFET条件下,均有效抑制器件的电流、电压过冲和振荡。Compared with silicon metal oxide semiconductor field effect transistor, silicon carbide metal oxide semiconductor field effect transistor has higher breakdown voltage, lower on-resistance, faster switching speed and higher operating temperature;therefore, it has been widely used in photovoltaic inverters, electric vehicles and wind power generation. However, the high switching speed of SiC MOSFET will cause current and voltage overshoot and oscillation during switching process. This will not only increases the switching loss of the device, but also may cause damage to the device. This article first analyzed the switching process of the SiC MOSFET in detail, and obtained the generation mechanism of current and voltage overshoot and oscillation during switching process. An active gate driver was designed based on the key factors affecting current and voltage overshoot and oscillation. The designed active gate driver can increase the driving resistance and reduce the gate current in a specific stage during switching process to suppress current and voltage overshoot and oscillation. The experimental results show that, compared with the traditional gate driver, the designed active gate driver can effectively suppress the current and voltage overshoot and oscillation of the device under different driving resistance, different load current and different Si C MOSFET.

关 键 词：碳化硅金属氧化物半导体场效应管 有源驱动电路 过冲 振荡 

分 类 号：TM23[一般工业技术—材料科学与工程]